JPS5570074A - Preparation of junction type field-effect transistor - Google Patents

Preparation of junction type field-effect transistor

Info

Publication number
JPS5570074A
JPS5570074A JP14365278A JP14365278A JPS5570074A JP S5570074 A JPS5570074 A JP S5570074A JP 14365278 A JP14365278 A JP 14365278A JP 14365278 A JP14365278 A JP 14365278A JP S5570074 A JPS5570074 A JP S5570074A
Authority
JP
Japan
Prior art keywords
regions
porosity
source
type
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14365278A
Other languages
Japanese (ja)
Other versions
JPS6146992B2 (en
Inventor
Tatsunori Nakajima
Kosei Kajiwara
Kazutoshi Nagano
Kosuke Yasuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14365278A priority Critical patent/JPS5570074A/en
Publication of JPS5570074A publication Critical patent/JPS5570074A/en
Publication of JPS6146992B2 publication Critical patent/JPS6146992B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To change the flanks and a base of a n-type island region into porosity and to oxidize them for a short time, by also forming p-type regions reaching a p- type silicon layer of the base to a plurality of source and drain region portions in the n-type island region beforehand when turning the flanks and the base into porosity and oxidizing them.
CONSTITUTION: A plurality of p-type regions 18 are mounted into source and drain regions, and change into porosity is advanced from the regions. Thus, the distance of turn into porosity and time can be shortened. When thermally treating the substrate in an oxidizing atmosphere, porous silicon 20, 21, 22 are converted into SiO2 regions 23, 24, 25, and a n-type island region that each source and drain forming region portion, which bases and flanks are surrounded by the SiO2 region 25, 23, also has SiO2 regions 24 is obtained. A source, a drain and a gate are made up, and each electrode is attached and connected.
COPYRIGHT: (C)1980,JPO&Japio
JP14365278A 1978-11-20 1978-11-20 Preparation of junction type field-effect transistor Granted JPS5570074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14365278A JPS5570074A (en) 1978-11-20 1978-11-20 Preparation of junction type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14365278A JPS5570074A (en) 1978-11-20 1978-11-20 Preparation of junction type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5570074A true JPS5570074A (en) 1980-05-27
JPS6146992B2 JPS6146992B2 (en) 1986-10-16

Family

ID=15343761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14365278A Granted JPS5570074A (en) 1978-11-20 1978-11-20 Preparation of junction type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5570074A (en)

Also Published As

Publication number Publication date
JPS6146992B2 (en) 1986-10-16

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