JPS5572043A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5572043A
JPS5572043A JP14622378A JP14622378A JPS5572043A JP S5572043 A JPS5572043 A JP S5572043A JP 14622378 A JP14622378 A JP 14622378A JP 14622378 A JP14622378 A JP 14622378A JP S5572043 A JPS5572043 A JP S5572043A
Authority
JP
Japan
Prior art keywords
film
capsule
constitution
turned
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14622378A
Other languages
Japanese (ja)
Inventor
Mikio Takagi
Mamoru Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14622378A priority Critical patent/JPS5572043A/en
Publication of JPS5572043A publication Critical patent/JPS5572043A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain a protective film having an excellent humidity proof property, by forming an oxide metal layer which is turned in pressurized oxidic atmosphere from a metal thin film on an insulating film of semiconductor element surface.
CONSTITUTION: An Si base plate 1 in where a diffusion region is formed is coated with a PSG 9 after Al electrodes 6W8 are set on through a SiO2 film. After an Al thin film of about 2000Å is evaporated on the film 9, the base 1 is sealed in a quartz capsule with some amount of water which is determined so as the pressure in the capsule becomes a set value when the capsule is heated, and it is heated for six hours at about 450°C. The Al film is turned to the Al2O3 film 11 by this method. With this constitution, the Al2O3 film 11 is formed without being polluted by impurity and also the protective layer having an excellent humidity proof property and stability is obtained. The oxide compound layer of Mo, Ti, W and Pd, etc., instead of Al is also effective.
COPYRIGHT: (C)1980,JPO&Japio
JP14622378A 1978-11-27 1978-11-27 Preparation of semiconductor device Pending JPS5572043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14622378A JPS5572043A (en) 1978-11-27 1978-11-27 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14622378A JPS5572043A (en) 1978-11-27 1978-11-27 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5572043A true JPS5572043A (en) 1980-05-30

Family

ID=15402887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14622378A Pending JPS5572043A (en) 1978-11-27 1978-11-27 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5572043A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358843A (en) * 1985-08-27 1988-03-14 ゼネラル　エレクトリツク　カンパニイ Semiconductor device
JP2008232450A (en) * 2007-03-16 2008-10-02 Mitsubishi Electric Corp Ventilation device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358843A (en) * 1985-08-27 1988-03-14 ゼネラル　エレクトリツク　カンパニイ Semiconductor device
JP2008232450A (en) * 2007-03-16 2008-10-02 Mitsubishi Electric Corp Ventilation device

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