JPS5575245A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5575245A
JPS5575245A JP14979578A JP14979578A JPS5575245A JP S5575245 A JPS5575245 A JP S5575245A JP 14979578 A JP14979578 A JP 14979578A JP 14979578 A JP14979578 A JP 14979578A JP S5575245 A JPS5575245 A JP S5575245A
Authority
JP
Japan
Prior art keywords
recess portions
semiconductor device
high density
selectively
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14979578A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14979578A priority Critical patent/JPS5575245A/en
Publication of JPS5575245A publication Critical patent/JPS5575245A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To obtain a fine oxide film pattern of a semiconductor device by implanting an impurity ion in high density on the recess portions selectively formed on a substrate surface and selectively oxidizing it.
CONSTITUTION: With a resist mask 4 recess portions 6 are formed on a silicon substrate 1 and an impurity ion is implanted in high density to thereby form impurity layers 7 on the recess portions 6. When it is treated in a wet oxygen atmosphere having atmospheric pressure and lower than 900°C., only the layers 7 are readily selectively oxidized to cause the recess portions 6 to be buried by SiO2 films 5'. Accordingly, the oxide region is not almost expanded out of the ion implanted layer to thereby simply form a fine pattern without strain at low temperature so as not to adversely effect the semiconductor characteristics.
COPYRIGHT: (C)1980,JPO&Japio
JP14979578A 1978-12-04 1978-12-04 Method of fabricating semiconductor device Pending JPS5575245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14979578A JPS5575245A (en) 1978-12-04 1978-12-04 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14979578A JPS5575245A (en) 1978-12-04 1978-12-04 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS5575245A true JPS5575245A (en) 1980-06-06

Family

ID=15482874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14979578A Pending JPS5575245A (en) 1978-12-04 1978-12-04 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5575245A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498175A (en) * 1972-05-10 1974-01-24
JPS5272189A (en) * 1975-12-12 1977-06-16 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS53108385A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Manufacture for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498175A (en) * 1972-05-10 1974-01-24
JPS5272189A (en) * 1975-12-12 1977-06-16 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS53108385A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Manufacture for semiconductor device

Similar Documents

Publication Publication Date Title
JPS57204133A (en) Manufacture of semiconductor integrated circuit
JPS5735341A (en) Method of seperating elements of semiconductor device
JPS5599744A (en) Manufacture of semiconductor device
JPS5575245A (en) Method of fabricating semiconductor device
JPS5550636A (en) Preparation of semiconductor device
EP0078890A3 (en) Method of fabrication of dielectrically isolated cmos device with an isolated slot
JPS5792858A (en) Semiconductor integrated circuit device and manufacture thereof
JPS56140641A (en) Manufacture of semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS5583267A (en) Method of fabricating semiconductor device
JPS5568651A (en) Manufacturing method of semiconductor device
JPS54109783A (en) Manufacture of semiconductor device
JPS5515230A (en) Semiconductor device and its manufacturing method
JPS56157044A (en) Insulating isolation of semiconductor element
JPS54162978A (en) Manufacture of semicinductor device
JPS5550666A (en) Method of fabricating double gate mos-type integrated circuit
JPS5570070A (en) Preparation of semiconductor integrated circuit
JPS5559778A (en) Method of fabricating semiconductor device
JPS5550667A (en) Method of fabricating double gate mos-type integrated circuit
JPS5341986A (en) Production of semiconductor unit
JPS5519874A (en) Manufacturing method of semiconductor element
JPS5710246A (en) Manufacture of semiconductor device
JPS5643744A (en) Manufacture of semiconductor device
JPS5754347A (en) Selective oxidation
JPS5650575A (en) Manufacture of semiconductor device