JPS5578541A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5578541A JPS5578541A JP15254478A JP15254478A JPS5578541A JP S5578541 A JPS5578541 A JP S5578541A JP 15254478 A JP15254478 A JP 15254478A JP 15254478 A JP15254478 A JP 15254478A JP S5578541 A JPS5578541 A JP S5578541A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- silicon oxide
- oxide film
- type impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 238000005468 ion implantation Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/39—Robotics, robotics to robotics hand
- G05B2219/39177—Compensation position working point as function of inclination tool, hand
Landscapes
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To decrease junction capacitance on the bottom of a diffused layer by a method wherein a reverse conduction type region is formed on the surface of a single conduction type semiconductor substrate, a single conduction type impurity is implanted in the substrate surface excluding region, and a dielectric isolation region is formed selectively on the substarte surface.
CONSTITUTION: A p-type well region 18 is formed on a part of the surface of an n-type substrate 17, and then a thin silicon oxide film 19 is formed. An n-type impurity like phosphorus is subjected to ion implantation in the entire surface region 21 in dose of 1011W2×1012cm-2. A thin silicon oxide film 22 is formed on the surface of the substrate 17, and a silicon nitride film 23 of the same thickness is formed thereon. A p-type impurity 26 like boron is subjected to ion implantation in the substrate surface of a field region of an N-channel transistor. The oxidation resisting coat 23 and the silicon oxide film 22 left in element active region are removed through etching. A clean gate oxidized film 28 is formed on the surface of substrate 17, and a poly-crystal silicone layer 29 is formed thereon.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15254478A JPS5578541A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15254478A JPS5578541A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5578541A true JPS5578541A (en) | 1980-06-13 |
| JPS6348179B2 JPS6348179B2 (en) | 1988-09-28 |
Family
ID=15542771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15254478A Granted JPS5578541A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5578541A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59161859A (en) * | 1983-03-07 | 1984-09-12 | Toshiba Corp | Complementary type metal oxide semiconductor device and manufacture thereof |
| JPS59161838A (en) * | 1983-03-07 | 1984-09-12 | Toshiba Corp | Semiconductor device and manufacture thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5292489A (en) * | 1976-01-30 | 1977-08-03 | Hitachi Ltd | Manufacture of c-mis semiconductor |
-
1978
- 1978-12-08 JP JP15254478A patent/JPS5578541A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5292489A (en) * | 1976-01-30 | 1977-08-03 | Hitachi Ltd | Manufacture of c-mis semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59161859A (en) * | 1983-03-07 | 1984-09-12 | Toshiba Corp | Complementary type metal oxide semiconductor device and manufacture thereof |
| JPS59161838A (en) * | 1983-03-07 | 1984-09-12 | Toshiba Corp | Semiconductor device and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6348179B2 (en) | 1988-09-28 |
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