JPS558023A - Heat-generating element - Google Patents

Heat-generating element

Info

Publication number
JPS558023A
JPS558023A JP7982978A JP7982978A JPS558023A JP S558023 A JPS558023 A JP S558023A JP 7982978 A JP7982978 A JP 7982978A JP 7982978 A JP7982978 A JP 7982978A JP S558023 A JPS558023 A JP S558023A
Authority
JP
Japan
Prior art keywords
layer
type
dispersion
electrode
manufacturing technology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7982978A
Other languages
Japanese (ja)
Inventor
Meiji Den
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP7982978A priority Critical patent/JPS558023A/en
Publication of JPS558023A publication Critical patent/JPS558023A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a small-but-highly-reliable heat-generating element by making the most of the mono-lithic IC manufacturing technology.
CONSTITUTION: An N epi-layer 22 is piled onto a P-type Si base plate 21 and separated by the P-type layer 21 with dispersion of B. And then, a P layer 23 is selectively formed by dispersion of B. An SiO2 film 24 on the surface is provided with a window to prepare an Al electrode 25. Further, the electrode is formed in such a manner that ajoining couple of n and p layers are connected one after another, and external connection terminals are connected to n layer 22 and p layer 23, respectively. When it is heated from the top and radiated from the bottom, thermal electromotive force is generated. As the IC manufacturing technology is utilized for the processing, it can be manufactured into a small size, and since reciprocal wiring of the P-type layers can be done at one time, it is possible to reduce in number of work processes and to improve reliability.
COPYRIGHT: (C)1980,JPO&Japio
JP7982978A 1978-07-03 1978-07-03 Heat-generating element Pending JPS558023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7982978A JPS558023A (en) 1978-07-03 1978-07-03 Heat-generating element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7982978A JPS558023A (en) 1978-07-03 1978-07-03 Heat-generating element

Publications (1)

Publication Number Publication Date
JPS558023A true JPS558023A (en) 1980-01-21

Family

ID=13701089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7982978A Pending JPS558023A (en) 1978-07-03 1978-07-03 Heat-generating element

Country Status (1)

Country Link
JP (1) JPS558023A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220870A (en) * 1987-06-23 1989-09-04 British Gas Plc Small thermoelectric converter
FR2963165A1 (en) * 2010-07-22 2012-01-27 St Microelectronics Crolles 2 METHOD FOR GENERATING ELECTRIC ENERGY IN A SEMICONDUCTOR DEVICE, AND CORRESPONDING DEVICE

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220870A (en) * 1987-06-23 1989-09-04 British Gas Plc Small thermoelectric converter
FR2963165A1 (en) * 2010-07-22 2012-01-27 St Microelectronics Crolles 2 METHOD FOR GENERATING ELECTRIC ENERGY IN A SEMICONDUCTOR DEVICE, AND CORRESPONDING DEVICE
US8847059B2 (en) 2010-07-22 2014-09-30 Stmicroelectronics (Crolles 2) Sas Process for generating electrical energy in a semiconductor device and the corresponding device

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