JPS5580366A - Production of compound semiconductor element - Google Patents

Production of compound semiconductor element

Info

Publication number
JPS5580366A
JPS5580366A JP15304478A JP15304478A JPS5580366A JP S5580366 A JPS5580366 A JP S5580366A JP 15304478 A JP15304478 A JP 15304478A JP 15304478 A JP15304478 A JP 15304478A JP S5580366 A JPS5580366 A JP S5580366A
Authority
JP
Japan
Prior art keywords
film
etching
electrode layer
type gaas
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15304478A
Other languages
Japanese (ja)
Inventor
Eiji Murata
Kazuhiro Arai
Susumu Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15304478A priority Critical patent/JPS5580366A/en
Publication of JPS5580366A publication Critical patent/JPS5580366A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To avoid reduction of electrode contact area in a mesa etching by adopting a laminated structure of Au-Ge, Pt, Mo or W as the electrode layer on an n- type GaAs crystal. CONSTITUTION:An n-and p-type GaAs films 12, 13 are superposed to an n<+>-type GaAs substrate. An AuGe film 14, Pt film 100, Mo film 15 and an Au film 16 are superposed to the substrate 11 to form an electrode layer 10. Another electrode layer 20 is formed by forming a Ti film 17, Mo film 18 and a thick Au film 19 on the layer 13. Then, a mesa etching is effected with a solution of a compound ratio of H2SO4:H2O2:H2O=4:1:1, making use of the electrode layer 10 as a mask. By so doing, Pt is diffused in the AuGe to form an Au-Ge-Au alloy so that the potential difference between the etching solution and the GaAs crystal is extinguished to prevent further etching so that the etching at the side surface, which has been inevitable in the conventional technic, is completely eliminated to avoid the reduction of the contact area between the electrode 10 and the crystal 11.
JP15304478A 1978-12-13 1978-12-13 Production of compound semiconductor element Pending JPS5580366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15304478A JPS5580366A (en) 1978-12-13 1978-12-13 Production of compound semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15304478A JPS5580366A (en) 1978-12-13 1978-12-13 Production of compound semiconductor element

Publications (1)

Publication Number Publication Date
JPS5580366A true JPS5580366A (en) 1980-06-17

Family

ID=15553736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15304478A Pending JPS5580366A (en) 1978-12-13 1978-12-13 Production of compound semiconductor element

Country Status (1)

Country Link
JP (1) JPS5580366A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123183A (en) * 1979-03-15 1980-09-22 Nec Corp Magnetic detector
JPS60208882A (en) * 1984-04-02 1985-10-21 Asahi Chem Ind Co Ltd magnetoelectric conversion element
JPS6120378A (en) * 1984-07-09 1986-01-29 Asahi Chem Ind Co Ltd Magnetoelectric conversion element
US4695869A (en) * 1983-05-31 1987-09-22 Kabushiki Kaisha Toshiba GAAS semiconductor device
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
JPH05243636A (en) * 1992-10-26 1993-09-21 Asahi Chem Ind Co Ltd Mangetoelectric transducer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123183A (en) * 1979-03-15 1980-09-22 Nec Corp Magnetic detector
US4695869A (en) * 1983-05-31 1987-09-22 Kabushiki Kaisha Toshiba GAAS semiconductor device
JPS60208882A (en) * 1984-04-02 1985-10-21 Asahi Chem Ind Co Ltd magnetoelectric conversion element
JPS6120378A (en) * 1984-07-09 1986-01-29 Asahi Chem Ind Co Ltd Magnetoelectric conversion element
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
JPH05243636A (en) * 1992-10-26 1993-09-21 Asahi Chem Ind Co Ltd Mangetoelectric transducer

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