JPS5629372A - Schottky-type field effect transistor and manufacture thereof - Google Patents

Schottky-type field effect transistor and manufacture thereof

Info

Publication number
JPS5629372A
JPS5629372A JP10402979A JP10402979A JPS5629372A JP S5629372 A JPS5629372 A JP S5629372A JP 10402979 A JP10402979 A JP 10402979A JP 10402979 A JP10402979 A JP 10402979A JP S5629372 A JPS5629372 A JP S5629372A
Authority
JP
Japan
Prior art keywords
layer
electrodes
film
schottky
remained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10402979A
Other languages
Japanese (ja)
Inventor
Mikio Tatematsu
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10402979A priority Critical patent/JPS5629372A/en
Publication of JPS5629372A publication Critical patent/JPS5629372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To simplify the process in forming the electrodes on the Schottky-type FET; by using an electrode material such as Ta, Nb, V, and the like, which have the smaller reactive property with Au and the diffusion suppressing effect of Ga; and obtaining electrodes and a bonding pad at the same time. CONSTITUTION:An N type buffer layer 32 and an N type active GaAs layer 33 are laminated on a semi-insulating GaAs substrate 31, and epitaxially grown. The layer 33 is of a mesa shape. Then, a source region and a dreain region are formed on the layer 33; and the layered ohmic electrodes composed of 34 and 36, and 35 and 37, comprising AuGe alloy and Pt, are formed on both regions. All the surface is covered by an SiO2 film 38. Thereafter, the etching is performed by using the mask of a photoresist film 39, and a hole is perforated in the film 38. Then, Ta layers 40-43 and Au layers 44-47 are deposited on all the surface. Thereafter, the film 39 is removed together with the Ta layer and the Au layer which are deposited on the film 39. The Schottky electrodes comprising the Ta layer and the Au layer are remained on the layered electrodes which have been formed beforehand, and the pad of the same material is remained between the electrodes on the substrate 31.
JP10402979A 1979-08-17 1979-08-17 Schottky-type field effect transistor and manufacture thereof Pending JPS5629372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10402979A JPS5629372A (en) 1979-08-17 1979-08-17 Schottky-type field effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10402979A JPS5629372A (en) 1979-08-17 1979-08-17 Schottky-type field effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5629372A true JPS5629372A (en) 1981-03-24

Family

ID=14369813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10402979A Pending JPS5629372A (en) 1979-08-17 1979-08-17 Schottky-type field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5629372A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0243769A (en) * 1988-08-03 1990-02-14 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0243769A (en) * 1988-08-03 1990-02-14 Toshiba Corp Semiconductor device and manufacture thereof

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