JPS5580366A - Production of compound semiconductor element - Google Patents

Production of compound semiconductor element

Info

Publication number
JPS5580366A
JPS5580366A JP15304478A JP15304478A JPS5580366A JP S5580366 A JPS5580366 A JP S5580366A JP 15304478 A JP15304478 A JP 15304478A JP 15304478 A JP15304478 A JP 15304478A JP S5580366 A JPS5580366 A JP S5580366A
Authority
JP
Japan
Prior art keywords
film
etching
electrode layer
type gaas
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15304478A
Other languages
English (en)
Inventor
Eiji Murata
Kazuhiro Arai
Susumu Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15304478A priority Critical patent/JPS5580366A/ja
Publication of JPS5580366A publication Critical patent/JPS5580366A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Hall/Mr Elements (AREA)
JP15304478A 1978-12-13 1978-12-13 Production of compound semiconductor element Pending JPS5580366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15304478A JPS5580366A (en) 1978-12-13 1978-12-13 Production of compound semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15304478A JPS5580366A (en) 1978-12-13 1978-12-13 Production of compound semiconductor element

Publications (1)

Publication Number Publication Date
JPS5580366A true JPS5580366A (en) 1980-06-17

Family

ID=15553736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15304478A Pending JPS5580366A (en) 1978-12-13 1978-12-13 Production of compound semiconductor element

Country Status (1)

Country Link
JP (1) JPS5580366A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123183A (en) * 1979-03-15 1980-09-22 Nec Corp Magnetic detector
JPS60208882A (ja) * 1984-04-02 1985-10-21 Asahi Chem Ind Co Ltd 磁電変換素子
JPS6120378A (ja) * 1984-07-09 1986-01-29 Asahi Chem Ind Co Ltd 磁電変換素子
US4695869A (en) * 1983-05-31 1987-09-22 Kabushiki Kaisha Toshiba GAAS semiconductor device
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
JPH05243636A (ja) * 1992-10-26 1993-09-21 Asahi Chem Ind Co Ltd 磁電変換素子

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123183A (en) * 1979-03-15 1980-09-22 Nec Corp Magnetic detector
US4695869A (en) * 1983-05-31 1987-09-22 Kabushiki Kaisha Toshiba GAAS semiconductor device
JPS60208882A (ja) * 1984-04-02 1985-10-21 Asahi Chem Ind Co Ltd 磁電変換素子
JPS6120378A (ja) * 1984-07-09 1986-01-29 Asahi Chem Ind Co Ltd 磁電変換素子
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
JPH05243636A (ja) * 1992-10-26 1993-09-21 Asahi Chem Ind Co Ltd 磁電変換素子

Similar Documents

Publication Publication Date Title
JPS55117295A (en) Semiconductor light emitting element and fabricating the same
JPS6482676A (en) Iii-v compound semiconductor field-effect transistor and manufacture thereof
FR2371776A1 (fr) Structure semi-conductrice a heterojonctions
JPS5580366A (en) Production of compound semiconductor element
JPS5439573A (en) Compound semiconductor device
JPS5548958A (en) Semiconductor device
JPS5618484A (en) Manufacture of semiconductor laser
JPS5642390A (en) Formation of electrode on semiconductor device
JPS6444049A (en) Electrode for flip chip bonding
JPS6467970A (en) Thin film transistor
JPS5629373A (en) Schottky type field effect transistor and manufacture thereof
JPS56111264A (en) Manufacture of semiconductor device
JPS54143065A (en) Semiconductor device
JPS55151385A (en) Fabricating method of semiconductor laser element
JPS54162457A (en) Electrode forming method for semiconductor element
JPS54126489A (en) Stripe structure of semiconductor laser element
JPS52106282A (en) Semiconductor laser unit
JPS57198689A (en) Semiconductor device
JPS5629372A (en) Schottky-type field effect transistor and manufacture thereof
JPS55132087A (en) Semiconductor laser device and its manufacturing
JPS57143888A (en) Electrode structure of semiconductor light emitting device
JPS5556644A (en) Manufacture of semiconductor integrated circuit
JPS5612788A (en) Manufacture of semiconductor element
JPS5534445A (en) Semiconductor luminous device
JPS55111188A (en) Semiconductor laser device and manufacturing method thereof