JPS5583236A - Cutting method for semiconductor wafer - Google Patents

Cutting method for semiconductor wafer

Info

Publication number
JPS5583236A
JPS5583236A JP15646878A JP15646878A JPS5583236A JP S5583236 A JPS5583236 A JP S5583236A JP 15646878 A JP15646878 A JP 15646878A JP 15646878 A JP15646878 A JP 15646878A JP S5583236 A JPS5583236 A JP S5583236A
Authority
JP
Japan
Prior art keywords
pellet
bonded
semiconductor wafer
cutting method
mixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15646878A
Other languages
Japanese (ja)
Inventor
Kensuke Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15646878A priority Critical patent/JPS5583236A/en
Publication of JPS5583236A publication Critical patent/JPS5583236A/en
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)

Abstract

PURPOSE: To allow judging pellet for acceptance or rejection while the pellet is being bonded on base by using electric conductive adhesive.
CONSTITUTION: Powder of Fe, Al, Cu, Ni, etc. is mixed into conventional tar or rosin based thermoplastic resin in amount of 5W80%. If the mixed amount is less than 5%, electric conductivity is poor. If it exceeds 80%, adhesivity is reduced and cutting property by sandblast becomes poor. Using the adhesive allows pellet inspection which is bonded on base plate and therefore is convenient.
COPYRIGHT: (C)1980,JPO&Japio
JP15646878A 1978-12-20 1978-12-20 Cutting method for semiconductor wafer Pending JPS5583236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15646878A JPS5583236A (en) 1978-12-20 1978-12-20 Cutting method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15646878A JPS5583236A (en) 1978-12-20 1978-12-20 Cutting method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5583236A true JPS5583236A (en) 1980-06-23

Family

ID=15628397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15646878A Pending JPS5583236A (en) 1978-12-20 1978-12-20 Cutting method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5583236A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075954A1 (en) * 2000-03-31 2001-10-11 Toyoda Gosei Co., Ltd. Method for dicing semiconductor wafer into chips
WO2003105244A1 (en) * 2002-01-01 2003-12-18 古河電気工業株式会社 Thermoelectric element module and method for fabricating the same
CN102240987A (en) * 2011-05-30 2011-11-16 上海百兰朵电子科技有限公司 Synthetic copper plate grinding disk

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075954A1 (en) * 2000-03-31 2001-10-11 Toyoda Gosei Co., Ltd. Method for dicing semiconductor wafer into chips
US7121925B2 (en) 2000-03-31 2006-10-17 Toyoda Gosei Co., Ltd. Method for dicing semiconductor wafer into chips
WO2003105244A1 (en) * 2002-01-01 2003-12-18 古河電気工業株式会社 Thermoelectric element module and method for fabricating the same
CN102240987A (en) * 2011-05-30 2011-11-16 上海百兰朵电子科技有限公司 Synthetic copper plate grinding disk

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