JPS5583260A - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same

Info

Publication number
JPS5583260A
JPS5583260A JP15651378A JP15651378A JPS5583260A JP S5583260 A JPS5583260 A JP S5583260A JP 15651378 A JP15651378 A JP 15651378A JP 15651378 A JP15651378 A JP 15651378A JP S5583260 A JPS5583260 A JP S5583260A
Authority
JP
Japan
Prior art keywords
film
single crystal
opening
crystal silicon
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15651378A
Other languages
Japanese (ja)
Inventor
Kyoji Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15651378A priority Critical patent/JPS5583260A/en
Publication of JPS5583260A publication Critical patent/JPS5583260A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain an intermediate resistance value of a resistor in a semiconductor device by coating an insulating film on a base region formed in a semiconductor substrate, perforating an opening in the film, coating non-single crystal silicon films added with P and As thereon, heat treating them to thereby form an emitter region and forming the resistor by non-single crystal film.
CONSTITUTION: An SiO2 film 2 is coated on an n-type silicon substrate 1 becoming a collector, an opening 3 is perforated in the film 2, and a p-type base region 4 is diffused in the substrate 1. Then, the film 2 is converted into a film 5, an opening 6 is again perforated in the film 5, p-added non-single crystal silicon film 7 is grown using SiH3 and PH3 on the entire surface, and As-added non-single crystal silicon film 8 is further grown thereon using SiH3 and AsH3. Then, the laminated film is retained as a resistive layer 9 by a photoetching process, and the others are removed, high temperature treatment is conducted in N2 or O2 atmosohere, the P and the As are diffused in the region 4 from the layer 9 through the opeping 6 to thereby form an n-type emitter region 10. Simultaneously, an emitter resistive layer 9 having an intermediate resistance vlaue is formed by utilizing the difference of the impurities contained in the films 7 and 8.
COPYRIGHT: (C)1980,JPO&Japio
JP15651378A 1978-12-20 1978-12-20 Semiconductor device and method of fabricating the same Pending JPS5583260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15651378A JPS5583260A (en) 1978-12-20 1978-12-20 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15651378A JPS5583260A (en) 1978-12-20 1978-12-20 Semiconductor device and method of fabricating the same

Publications (1)

Publication Number Publication Date
JPS5583260A true JPS5583260A (en) 1980-06-23

Family

ID=15629409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15651378A Pending JPS5583260A (en) 1978-12-20 1978-12-20 Semiconductor device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS5583260A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152665A (en) * 1983-02-21 1984-08-31 Nec Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152665A (en) * 1983-02-21 1984-08-31 Nec Corp Semiconductor device and manufacture thereof

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