JPS559452A - Short channel mis type electric field effective transistor - Google Patents

Short channel mis type electric field effective transistor

Info

Publication number
JPS559452A
JPS559452A JP8241478A JP8241478A JPS559452A JP S559452 A JPS559452 A JP S559452A JP 8241478 A JP8241478 A JP 8241478A JP 8241478 A JP8241478 A JP 8241478A JP S559452 A JPS559452 A JP S559452A
Authority
JP
Japan
Prior art keywords
drain
source
type
short channel
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8241478A
Other languages
Japanese (ja)
Inventor
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8241478A priority Critical patent/JPS559452A/en
Publication of JPS559452A publication Critical patent/JPS559452A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0217—Manufacture or treatment of FETs having insulated gates [IGFET] forming self-aligned punch-through stoppers or threshold implants under gate regions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE: To prevent a punching through of a source and a drain by doping impurities, which have the same conductivity type as the basic plate, on the lower side of a channel at a place separated from the source and the drain and at a depth not effecting a threshold value voltage.
CONSTITUTION: On a p-type Si base plate 41 are formed a field oxidized film 42, a p-type inversion prevention layer 43, a gate oxidized film 44, a p-type threshold control layer 45, an electrode poly-Si 46. Next, B ion is injected through a resist mask 47 to make a punch-through prevention layer 48 having its peak at the depth of about 0.3μ. The width l of the layer 48 is about 0.4μm. The mask 47 is removed to selectively form a poly-Si gate electrode 49 by corrosive carving; then, As ion is injected to form a source 50 and a drain 51. The distance L between the two layers is to be about 0.8μm. Next, an insulation film 52 is made to form Al wire 52. A short channel FET with this structure has an extremely high punch- through voltage reaching higher than about 15V.
COPYRIGHT: (C)1980,JPO&Japio
JP8241478A 1978-07-05 1978-07-05 Short channel mis type electric field effective transistor Pending JPS559452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8241478A JPS559452A (en) 1978-07-05 1978-07-05 Short channel mis type electric field effective transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8241478A JPS559452A (en) 1978-07-05 1978-07-05 Short channel mis type electric field effective transistor

Publications (1)

Publication Number Publication Date
JPS559452A true JPS559452A (en) 1980-01-23

Family

ID=13773923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8241478A Pending JPS559452A (en) 1978-07-05 1978-07-05 Short channel mis type electric field effective transistor

Country Status (1)

Country Link
JP (1) JPS559452A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796571A (en) * 1980-11-03 1982-06-15 Ibm Channel barrier modulation semiconductor device
EP0768715A3 (en) * 1995-10-10 1998-07-08 Motorola Inc. Graded-channel semiconductor device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796571A (en) * 1980-11-03 1982-06-15 Ibm Channel barrier modulation semiconductor device
EP0768715A3 (en) * 1995-10-10 1998-07-08 Motorola Inc. Graded-channel semiconductor device and method of manufacturing the same

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