JPS559454A - Short channel mis type electric field effective transistor - Google Patents
Short channel mis type electric field effective transistorInfo
- Publication number
- JPS559454A JPS559454A JP8241678A JP8241678A JPS559454A JP S559454 A JPS559454 A JP S559454A JP 8241678 A JP8241678 A JP 8241678A JP 8241678 A JP8241678 A JP 8241678A JP S559454 A JPS559454 A JP S559454A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- prevention
- injected
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005684 electric field Effects 0.000 title 1
- 230000002265 prevention Effects 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To improve the property of a short channel MISFFET under the structure where a punch-through prevention doping layer is placed not directly under, or in a sufficiently deeper layer from a threshold value voltage control doping layer.
CONSTITUTION: On a p-type Si base plate 51 are formed a field oxidized film 52, a p-type inversion prevention layer 53, a gate oxidized layer 54, an electrode poly- Si 55. Next, B ion is injected through a resist mask 56 to form a threshold value voltage control channel doping layer 57. Next, Al is attached through vaporization and the resist 56 is removed. B ion is injected through an Al mask 58 to make a punch-through prevention doping layer 59. Next, the Al mask is removed to form a gate electrode 55a by corrosive carving, and As ion is injected with the electrode 55a as a mask to make a source 60, a drain 61. Next, a wiring is set through an annealed insulation film to be covered with a prevention film. Under this structure, the withstand voltage between the source and the drain becomes more than 15V, and the dependence of threshold value voltage on a base plate bias is less than 1/2 of the conventional type. Thus, high quality is to be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8241678A JPS559454A (en) | 1978-07-05 | 1978-07-05 | Short channel mis type electric field effective transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8241678A JPS559454A (en) | 1978-07-05 | 1978-07-05 | Short channel mis type electric field effective transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS559454A true JPS559454A (en) | 1980-01-23 |
Family
ID=13773976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8241678A Pending JPS559454A (en) | 1978-07-05 | 1978-07-05 | Short channel mis type electric field effective transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS559454A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61160975A (en) * | 1985-01-08 | 1986-07-21 | Matsushita Electric Ind Co Ltd | Mos field effect transistor |
| JPS6337667A (en) * | 1986-07-31 | 1988-02-18 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1978
- 1978-07-05 JP JP8241678A patent/JPS559454A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61160975A (en) * | 1985-01-08 | 1986-07-21 | Matsushita Electric Ind Co Ltd | Mos field effect transistor |
| JPS6337667A (en) * | 1986-07-31 | 1988-02-18 | Fujitsu Ltd | Manufacture of semiconductor device |
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