JPS5596633A - Method of forming electrode of semiconductor device - Google Patents

Method of forming electrode of semiconductor device

Info

Publication number
JPS5596633A
JPS5596633A JP513379A JP513379A JPS5596633A JP S5596633 A JPS5596633 A JP S5596633A JP 513379 A JP513379 A JP 513379A JP 513379 A JP513379 A JP 513379A JP S5596633 A JPS5596633 A JP S5596633A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor device
torr
diffusing
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP513379A
Other languages
Japanese (ja)
Inventor
Tetsuro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP513379A priority Critical patent/JPS5596633A/en
Publication of JPS5596633A publication Critical patent/JPS5596633A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain low resistance ohmic contact at a semiconductor device by diffusing Zn at predetermined temperature and in phosphorus pressure atmosphere at Ga, As and P substrate containing much phosphorus content and then retaining the substrate at 100W300°C with aluminum provided.
CONSTITUTION: Zn is diffused at Ga, As1-X, PX substrate, where X is limited to 0.6≤X≤1.0, in a sealed tube under the condition that phosphorus pressure P is 1×10-1Torr≤P≤2×103Torr and the diffusing temperature Tj is 650°C≤Tj ≤800°C. Then, the substrate is heated at 100W300°C, and vacuum deposited with aluminum in such heated state. The substrate is finally heat treated at 450W600°C for approx. 60min. According to this method, the substrate does not sacrifice the fundamental characteristics of the semiconductor device but can obtain extremely stable low resistance ohimc contact in mass production.
COPYRIGHT: (C)1980,JPO&Japio
JP513379A 1979-01-19 1979-01-19 Method of forming electrode of semiconductor device Pending JPS5596633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP513379A JPS5596633A (en) 1979-01-19 1979-01-19 Method of forming electrode of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP513379A JPS5596633A (en) 1979-01-19 1979-01-19 Method of forming electrode of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5596633A true JPS5596633A (en) 1980-07-23

Family

ID=11602805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP513379A Pending JPS5596633A (en) 1979-01-19 1979-01-19 Method of forming electrode of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5596633A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59186379A (en) * 1983-04-07 1984-10-23 Nec Corp Method for manufacturing compound semiconductor device
JPH01164028A (en) * 1987-12-21 1989-06-28 Nippon Telegr & Teleph Corp <Ntt> Formation of ohmic electrode and apparatus therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59186379A (en) * 1983-04-07 1984-10-23 Nec Corp Method for manufacturing compound semiconductor device
JPH01164028A (en) * 1987-12-21 1989-06-28 Nippon Telegr & Teleph Corp <Ntt> Formation of ohmic electrode and apparatus therefor

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