JPS56100464A - Programmable cell used for programmable electronically operating row element - Google Patents

Programmable cell used for programmable electronically operating row element

Info

Publication number
JPS56100464A
JPS56100464A JP17519980A JP17519980A JPS56100464A JP S56100464 A JPS56100464 A JP S56100464A JP 17519980 A JP17519980 A JP 17519980A JP 17519980 A JP17519980 A JP 17519980A JP S56100464 A JPS56100464 A JP S56100464A
Authority
JP
Japan
Prior art keywords
programmable
cell used
row element
electronically operating
operating row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17519980A
Other languages
English (en)
Japanese (ja)
Inventor
Etsuchi Horumubaagu Sukotsuto
Ei Furasuku Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of JPS56100464A publication Critical patent/JPS56100464A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/366—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H10D48/381—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Bipolar Transistors (AREA)
JP17519980A 1979-12-13 1980-12-11 Programmable cell used for programmable electronically operating row element Pending JPS56100464A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US20827480A 1980-11-19 1980-11-19

Publications (1)

Publication Number Publication Date
JPS56100464A true JPS56100464A (en) 1981-08-12

Family

ID=26799984

Family Applications (3)

Application Number Title Priority Date Filing Date
JP17519980A Pending JPS56100464A (en) 1979-12-13 1980-12-11 Programmable cell used for programmable electronically operating row element
JP17520080A Pending JPS56115571A (en) 1979-12-13 1980-12-11 Thin film transistor
JP17568280A Pending JPS56103474A (en) 1979-12-13 1980-12-12 Diode for rom or eeprom

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP17520080A Pending JPS56115571A (en) 1979-12-13 1980-12-11 Thin film transistor
JP17568280A Pending JPS56103474A (en) 1979-12-13 1980-12-12 Diode for rom or eeprom

Country Status (15)

Country Link
JP (3) JPS56100464A (fr)
KR (2) KR850001045B1 (fr)
AU (1) AU543740B2 (fr)
BE (1) BE886631A (fr)
CA (3) CA1155239A (fr)
DE (1) DE3046701A1 (fr)
FR (1) FR2475295A1 (fr)
GB (1) GB2066566B (fr)
IL (1) IL61671A (fr)
IT (1) IT1194001B (fr)
MX (1) MX150800A (fr)
NL (1) NL8006771A (fr)
SE (1) SE8008739L (fr)
SG (1) SG72784G (fr)
ZA (3) ZA807761B (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168665A (ja) * 1983-03-07 1984-09-22 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 半導体メモリ装置およびその製造方法
JPS59501988A (ja) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− 安全弁装置及び方法
JP2004281497A (ja) * 2003-03-13 2004-10-07 Sharp Corp 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器
JP2004349504A (ja) * 2003-05-22 2004-12-09 Hitachi Ltd 半導体集積回路装置
JP2004363586A (ja) * 2003-06-04 2004-12-24 Samsung Electronics Co Ltd 相変換メモリ装置
JPWO2004027877A1 (ja) * 2002-09-19 2006-01-19 シャープ株式会社 抵抗変化機能体およびその製造方法
JP2007019559A (ja) * 2006-10-23 2007-01-25 Hitachi Ltd 半導体記憶装置及びその製造方法
US7341892B2 (en) 2002-02-01 2008-03-11 Hitachi, Ltd. Semiconductor memory cell and method of forming same
JP2008118108A (ja) * 2006-08-25 2008-05-22 Qimonda Ag 情報記憶素子およびその製造方法
JP2008124452A (ja) * 2006-10-27 2008-05-29 Qimonda Ag 修正可能なゲートスタックメモリ素子

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0072221B1 (fr) * 1981-08-07 1987-11-11 The British Petroleum Company p.l.c. Dispositif de mémoire non volatile électriquement programmable
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
AU562641B2 (en) * 1983-01-18 1987-06-18 Energy Conversion Devices Inc. Electronic matrix array
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US4545111A (en) * 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays
US4569121A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
JPS60153552U (ja) * 1984-03-24 1985-10-12 沖電気工業株式会社 Ｐｎ接合半導体装置
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4914055A (en) * 1989-08-24 1990-04-03 Advanced Micro Devices, Inc. Semiconductor antifuse structure and method
GB9113795D0 (en) * 1991-06-26 1991-08-14 Philips Electronic Associated Thin-film rom devices and their manufacture
GB9117680D0 (en) * 1991-08-16 1991-10-02 Philips Electronic Associated Electronic matrix array devices
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JP2500484B2 (ja) * 1994-07-11 1996-05-29 ソニー株式会社 薄膜トランジスタの製法
US6646912B2 (en) * 2001-06-05 2003-11-11 Hewlett-Packard Development Company, Lp. Non-volatile memory
US6599796B2 (en) * 2001-06-29 2003-07-29 Hewlett-Packard Development Company, L.P. Apparatus and fabrication process to reduce crosstalk in pirm memory array
JP4767653B2 (ja) * 2004-10-22 2011-09-07 株式会社半導体エネルギー研究所 半導体装置及び無線チップ
US7781758B2 (en) 2004-10-22 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5127920B2 (ja) * 2007-06-20 2013-01-23 台湾積體電路製造股▲ふん▼有限公司 電子装置及び電子装置の製造方法
US9716225B2 (en) 2014-09-03 2017-07-25 Micron Technology, Inc. Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122382A (en) * 1975-04-18 1976-10-26 Fujitsu Ltd Semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5819138B2 (ja) * 1977-01-11 1983-04-16 日本電信電話株式会社 半導体装置
JPS53144274A (en) * 1977-05-23 1978-12-15 Hitachi Ltd Semiconductor device and its manufacture
JPS5457879A (en) * 1977-10-15 1979-05-10 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
US4177475A (en) * 1977-10-31 1979-12-04 Burroughs Corporation High temperature amorphous memory device for an electrically alterable read-only memory
DE2909197A1 (de) * 1978-03-20 1979-10-04 Texas Instruments Inc Verfahren zur herstellung eines festspeichers und festspeichermatrix

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59501988A (ja) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− 安全弁装置及び方法
JPS59168665A (ja) * 1983-03-07 1984-09-22 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 半導体メモリ装置およびその製造方法
US7341892B2 (en) 2002-02-01 2008-03-11 Hitachi, Ltd. Semiconductor memory cell and method of forming same
JPWO2004027877A1 (ja) * 2002-09-19 2006-01-19 シャープ株式会社 抵抗変化機能体およびその製造方法
JP4808966B2 (ja) * 2002-09-19 2011-11-02 シャープ株式会社 抵抗変化機能体並びにそれを備えたメモリおよび電子機器
JP2004281497A (ja) * 2003-03-13 2004-10-07 Sharp Corp 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器
JP2004349504A (ja) * 2003-05-22 2004-12-09 Hitachi Ltd 半導体集積回路装置
JP2004363586A (ja) * 2003-06-04 2004-12-24 Samsung Electronics Co Ltd 相変換メモリ装置
JP2008118108A (ja) * 2006-08-25 2008-05-22 Qimonda Ag 情報記憶素子およびその製造方法
JP2007019559A (ja) * 2006-10-23 2007-01-25 Hitachi Ltd 半導体記憶装置及びその製造方法
JP2008124452A (ja) * 2006-10-27 2008-05-29 Qimonda Ag 修正可能なゲートスタックメモリ素子

Also Published As

Publication number Publication date
ZA807761B (en) 1981-12-30
DE3046701A1 (de) 1981-10-15
IT1194001B (it) 1988-08-31
IT8026643A0 (it) 1980-12-12
KR830004681A (ko) 1983-07-16
AU543740B2 (en) 1985-05-02
SE8008739L (sv) 1981-06-14
FR2475295A1 (fr) 1981-08-07
CA1155239A (fr) 1983-10-11
JPS56103474A (en) 1981-08-18
AU6531580A (en) 1981-06-18
SG72784G (en) 1985-03-29
CA1162327A (fr) 1984-02-14
IL61671A (en) 1984-04-30
ZA807762B (en) 1981-12-30
ZA807763B (en) 1981-12-30
NL8006771A (nl) 1981-07-16
BE886631A (fr) 1981-04-01
KR830004679A (ko) 1983-07-16
CA1161970A (fr) 1984-02-07
JPS56115571A (en) 1981-09-10
IL61671A0 (en) 1981-01-30
KR850001045B1 (en) 1985-07-19
MX150800A (es) 1984-07-19
GB2066566B (en) 1984-07-04
GB2066566A (en) 1981-07-08

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