JPS5615042A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5615042A
JPS5615042A JP9133379A JP9133379A JPS5615042A JP S5615042 A JPS5615042 A JP S5615042A JP 9133379 A JP9133379 A JP 9133379A JP 9133379 A JP9133379 A JP 9133379A JP S5615042 A JPS5615042 A JP S5615042A
Authority
JP
Japan
Prior art keywords
photo resist
film
semiconductor device
region
blank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9133379A
Other languages
Japanese (ja)
Inventor
Shuji Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9133379A priority Critical patent/JPS5615042A/en
Publication of JPS5615042A publication Critical patent/JPS5615042A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To prevent contamination or damage of the semiconductor device with a photo resist by bringing a photomask into contact with the photo resist in the specific region of a scribed grid to provide an infinitesimal interval in a chip region. CONSTITUTION:After forming an Si3N4 4 film on the entire surface of a blank Si substrate 3, Si3N4 film of the region of the scribed grid 2 is removed by photoetching process. Then, it is heat treated to selectively oxidize the Si substrate 3 at an opening 2 to form a thick SiO2 film 201. After coating and drying the photo resist 6 on the surface of the blank, a mask pattern 8 is formed, and a photo resist 6 is transcribed. At this time, it is exposed and irradiated in the state that an infinitesimal hollow layer 9 is formed between the surface of the photo resist 6 and the mask pattern 7 on the element pattern regionl 1.
JP9133379A 1979-07-18 1979-07-18 Manufacture of semiconductor device Pending JPS5615042A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9133379A JPS5615042A (en) 1979-07-18 1979-07-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9133379A JPS5615042A (en) 1979-07-18 1979-07-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5615042A true JPS5615042A (en) 1981-02-13

Family

ID=14023507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9133379A Pending JPS5615042A (en) 1979-07-18 1979-07-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5615042A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5293308A (en) * 1976-01-31 1977-08-05 Teac Corp Magnetic head
JPS582028A (en) * 1981-06-26 1983-01-07 Seiko Epson Corp Semiconductor device
JPS58180057A (en) * 1982-04-15 1983-10-21 Mitsubishi Electric Corp Manufacture of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48100076A (en) * 1972-03-29 1973-12-18
JPS5257783A (en) * 1975-11-06 1977-05-12 Toshiba Corp Semiconductor wafer
JPS5330875A (en) * 1976-09-03 1978-03-23 Toshiba Corp Production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48100076A (en) * 1972-03-29 1973-12-18
JPS5257783A (en) * 1975-11-06 1977-05-12 Toshiba Corp Semiconductor wafer
JPS5330875A (en) * 1976-09-03 1978-03-23 Toshiba Corp Production of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5293308A (en) * 1976-01-31 1977-08-05 Teac Corp Magnetic head
JPS582028A (en) * 1981-06-26 1983-01-07 Seiko Epson Corp Semiconductor device
JPS58180057A (en) * 1982-04-15 1983-10-21 Mitsubishi Electric Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5615042A (en) Manufacture of semiconductor device
JPS5661139A (en) Manufacture of semiconductor device
JPS5680130A (en) Manufacture of semiconductor device
JPS55151338A (en) Fabricating method of semiconductor device
JPS6424425A (en) Formation of tapered pattern
JPS5610930A (en) Manufacture of semiconductor device
JPS5694738A (en) Manufacturing method of semiconductor device
JPS57176040A (en) Preparation of photomask
JPS5655950A (en) Photographic etching method
JPS5626440A (en) Method for fine pattern formation
JPS5659236A (en) Photoresist developing method
UST954002I4 (en) Process for increasing mask life
JPS5629347A (en) Manufacture of semiconductor device
JPS5491183A (en) Production of semiconductor device
JPS55138841A (en) Method of forming pattern on semiconductor element
JPS57118641A (en) Lifting-off method
JPS5633841A (en) Manufacture of semiconductor device
JPS53112673A (en) Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution
JPS56116624A (en) Manufacture of semiconductor device
JPS55124230A (en) Forming method of pattern
JPS56167329A (en) Piling joint setting mark to be used in fine processing exposure technology
JPS5617348A (en) Exposing method
JPS55153329A (en) Manufacture of semiconductor device
JPS5732639A (en) Production of semiconductor device
JPS5656633A (en) Manufacture of semiconductor element