JPS6424425A - Formation of tapered pattern - Google Patents
Formation of tapered patternInfo
- Publication number
- JPS6424425A JPS6424425A JP62179936A JP17993687A JPS6424425A JP S6424425 A JPS6424425 A JP S6424425A JP 62179936 A JP62179936 A JP 62179936A JP 17993687 A JP17993687 A JP 17993687A JP S6424425 A JPS6424425 A JP S6424425A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive material
- mask pattern
- wafer
- mask
- shifted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
PURPOSE:To improve the characteristics of a semiconductor device such as a magnetic bubble memory by a method wherein a mask pattern is transcripted onto photosensitive material by exposure on a wafer while the relative position between the mask pattern and the wafer is shifted a number of times to form a tapered pattern with a good reproducibility. CONSTITUTION:The mask pattern 12 of a reticle is transcripted onto photosensitive material 11 by exposure while the relative position between the mask pattern 12 and a wafer is shifted a number of times. Then a thin film 10 on the wafer is subjected to dry-etching by using the photosensitive material 11 on which the mask pattern is transcripted as a mask. By performing exposure while the relative position between the mask pattern 12 and the wafer is shifted a number of times, a taper can be formed at the edge of the photosensitive material in accordance with the characteristics of the photosensitive material. Further, by etching the thin film by using the photosensitive material as a mask, a taper can be formed at the edge of the thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62179936A JPS6424425A (en) | 1987-07-21 | 1987-07-21 | Formation of tapered pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62179936A JPS6424425A (en) | 1987-07-21 | 1987-07-21 | Formation of tapered pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6424425A true JPS6424425A (en) | 1989-01-26 |
Family
ID=16074526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62179936A Pending JPS6424425A (en) | 1987-07-21 | 1987-07-21 | Formation of tapered pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6424425A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0973188A1 (en) * | 1998-07-16 | 2000-01-19 | Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH | Apparatus for the fabrication of tapered structures in semiconductors |
| US6333142B1 (en) | 1998-06-24 | 2001-12-25 | Fujitsu Limited | Master for barrier rib transfer mold, and method for forming barrier ribs of plasma display panel using the same |
| JP2002107942A (en) * | 2000-10-04 | 2002-04-10 | Ricoh Opt Ind Co Ltd | Exposure method |
| CN114641728A (en) * | 2019-10-09 | 2022-06-17 | 应用材料公司 | Maskless lithography method |
-
1987
- 1987-07-21 JP JP62179936A patent/JPS6424425A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333142B1 (en) | 1998-06-24 | 2001-12-25 | Fujitsu Limited | Master for barrier rib transfer mold, and method for forming barrier ribs of plasma display panel using the same |
| WO2004075232A1 (en) * | 1998-06-24 | 2004-09-02 | Osamu Toyoda | Original form for partition transfer intaglio and method for forming partitions of plasma display panel using the original form |
| EP0973188A1 (en) * | 1998-07-16 | 2000-01-19 | Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH | Apparatus for the fabrication of tapered structures in semiconductors |
| JP2002107942A (en) * | 2000-10-04 | 2002-04-10 | Ricoh Opt Ind Co Ltd | Exposure method |
| CN114641728A (en) * | 2019-10-09 | 2022-06-17 | 应用材料公司 | Maskless lithography method |
| JP2023506359A (en) * | 2019-10-09 | 2023-02-16 | アプライド マテリアルズ インコーポレイテッド | Maskless-based lithography method |
| US11934107B1 (en) | 2019-10-09 | 2024-03-19 | Applied Materials, Inc. | Maskless based lithography methods |
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