JPS5615071A - Electrostatic induction type thyristor - Google Patents

Electrostatic induction type thyristor

Info

Publication number
JPS5615071A
JPS5615071A JP9078579A JP9078579A JPS5615071A JP S5615071 A JPS5615071 A JP S5615071A JP 9078579 A JP9078579 A JP 9078579A JP 9078579 A JP9078579 A JP 9078579A JP S5615071 A JPS5615071 A JP S5615071A
Authority
JP
Japan
Prior art keywords
region
type
impurity density
electrostatic induction
high impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9078579A
Other languages
Japanese (ja)
Other versions
JPS6123667B2 (en
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9078579A priority Critical patent/JPS5615071A/en
Publication of JPS5615071A publication Critical patent/JPS5615071A/en
Publication of JPS6123667B2 publication Critical patent/JPS6123667B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To shorten a turn-off time of the electrostatic induction type thyristor by reducing the amount of carrier retained in a base region between a depletion layer formed in the base region at the time of turning off it and an anode region.
CONSTITUTION: There are formed a high impurity density n+-type cathode region 3 and a high impurity density p+-type gate region 4 for surrounding the region 3 at predetermined interval therefrom on part of the surface of a low impurity density n-- type base region 2. A high impurity density n+-type gase region 12 is formed in the boundary between the region 2 and a high impurity density p+-type anode region 1 to interrupt the main current between the anode region 1 and the cathode region 3 by the electrostatic induction of the gate region 4. At the time of turning off, a depletion layer reaches the base region 12 to almost eliminate the portion 2 where is not depleted.
COPYRIGHT: (C)1981,JPO&Japio
JP9078579A 1979-07-16 1979-07-16 Electrostatic induction type thyristor Granted JPS5615071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9078579A JPS5615071A (en) 1979-07-16 1979-07-16 Electrostatic induction type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9078579A JPS5615071A (en) 1979-07-16 1979-07-16 Electrostatic induction type thyristor

Publications (2)

Publication Number Publication Date
JPS5615071A true JPS5615071A (en) 1981-02-13
JPS6123667B2 JPS6123667B2 (en) 1986-06-06

Family

ID=14008244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9078579A Granted JPS5615071A (en) 1979-07-16 1979-07-16 Electrostatic induction type thyristor

Country Status (1)

Country Link
JP (1) JPS5615071A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62124774A (en) * 1985-11-25 1987-06-06 Matsushita Electric Works Ltd Electrostatic induction thyristor
JPS63205957A (en) * 1987-02-21 1988-08-25 Matsushita Electric Works Ltd Electrostatic induction thyristor
JPH01145847A (en) * 1987-12-01 1989-06-07 Semiconductor Res Found Power semiconductor device
JP2003110381A (en) * 2001-09-26 2003-04-11 Mitsubishi Electric Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62124774A (en) * 1985-11-25 1987-06-06 Matsushita Electric Works Ltd Electrostatic induction thyristor
JPS63205957A (en) * 1987-02-21 1988-08-25 Matsushita Electric Works Ltd Electrostatic induction thyristor
JPH01145847A (en) * 1987-12-01 1989-06-07 Semiconductor Res Found Power semiconductor device
JP2003110381A (en) * 2001-09-26 2003-04-11 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6123667B2 (en) 1986-06-06

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