JPS5538077A - Thyrister - Google Patents

Thyrister

Info

Publication number
JPS5538077A
JPS5538077A JP11205678A JP11205678A JPS5538077A JP S5538077 A JPS5538077 A JP S5538077A JP 11205678 A JP11205678 A JP 11205678A JP 11205678 A JP11205678 A JP 11205678A JP S5538077 A JPS5538077 A JP S5538077A
Authority
JP
Japan
Prior art keywords
thyrister
domain
emitter junction
auxiliary
carrier injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11205678A
Other languages
Japanese (ja)
Other versions
JPS6146983B2 (en
Inventor
Akira Kawakami
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11205678A priority Critical patent/JPS5538077A/en
Publication of JPS5538077A publication Critical patent/JPS5538077A/en
Publication of JPS6146983B2 publication Critical patent/JPS6146983B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To reduce dependency of the turn-off time upon the rise ratio of off-state voltage by decreasing the carrier injection efficiency of a 2nd emitter junction in the main thyrister domain comparing with the carrier injection efficiency of a 3rd emitter junction in an auxiliary thyristerdomain. CONSTITUTION:An auxiliary thyrister domain II of a PNPN composition is similarly provided in the center of the main thyrister domain I of a PNPN composition. The carrier injection of a 2nd emitter junction 15 in the main thyrister domain I is allowed to be given lower efficiency than the carrier injection of a 3rd emitter junction in the auxiliary domain II. For this reason, sandblast processing, gold diffusion, high impurities doping are carried out at the neighborhood of the exposure part of the 2nd emitter junction 15. Dependency of the turn-off time of the main thyrister upon the off-state voltage rise ratio dV/dt can be reduced without selectively increasing the leakage current on the surface of the junction 15 and lengthening the turn-off time of the auxiliary thyrister.
JP11205678A 1978-09-11 1978-09-11 Thyrister Granted JPS5538077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11205678A JPS5538077A (en) 1978-09-11 1978-09-11 Thyrister

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11205678A JPS5538077A (en) 1978-09-11 1978-09-11 Thyrister

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP59158269A Division JPS60143670A (en) 1984-07-28 1984-07-28 Thyristor
JP59158271A Division JPS6063965A (en) 1984-07-28 1984-07-28 Thyristor
JP59158270A Division JPS6063964A (en) 1984-07-28 1984-07-28 Thyristor

Publications (2)

Publication Number Publication Date
JPS5538077A true JPS5538077A (en) 1980-03-17
JPS6146983B2 JPS6146983B2 (en) 1986-10-16

Family

ID=14576922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11205678A Granted JPS5538077A (en) 1978-09-11 1978-09-11 Thyrister

Country Status (1)

Country Link
JP (1) JPS5538077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150862A (en) * 1980-04-24 1981-11-21 Nec Corp Semiconductor device
JPS59158559A (en) * 1983-02-28 1984-09-08 Mitsubishi Electric Corp Thyristor and manufacture threrof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150862A (en) * 1980-04-24 1981-11-21 Nec Corp Semiconductor device
JPS59158559A (en) * 1983-02-28 1984-09-08 Mitsubishi Electric Corp Thyristor and manufacture threrof

Also Published As

Publication number Publication date
JPS6146983B2 (en) 1986-10-16

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