JPS5615535A - Ion source chamber - Google Patents

Ion source chamber

Info

Publication number
JPS5615535A
JPS5615535A JP9119479A JP9119479A JPS5615535A JP S5615535 A JPS5615535 A JP S5615535A JP 9119479 A JP9119479 A JP 9119479A JP 9119479 A JP9119479 A JP 9119479A JP S5615535 A JPS5615535 A JP S5615535A
Authority
JP
Japan
Prior art keywords
filament
chamber
gas
introduction holes
uniformly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9119479A
Other languages
Japanese (ja)
Inventor
Yukihisa Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP9119479A priority Critical patent/JPS5615535A/en
Publication of JPS5615535A publication Critical patent/JPS5615535A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To lengthen the longevity of filament by providing a plurality of gas introduction holes uniformly distributed and single gas exhausting and ion beam- fetching hole in a chamber in which a barlike filament is incorporated. CONSTITUTION:The chamber 11 is housed with the barlike filament 12 connected to the power source 15', and also to the arc power source 16 between the filament 12 and the chamber 11. Also one side of the chamber 11 is provided uniformly with the plural gas introduction holes 13 along the filament 12, and the other side is provided with the single gas-exhausting and ion beam-fetching hole 14. Thus, gas is introduced into the introduction holes 13 uniformly provided and then flowed in an uniformly distributed manner throughout the whole length of the filament 12, so that the degree of the spattering of the filament 12 by means of ion is made uniform and the life of the filament can therefore be lengthened.
JP9119479A 1979-07-18 1979-07-18 Ion source chamber Pending JPS5615535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9119479A JPS5615535A (en) 1979-07-18 1979-07-18 Ion source chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9119479A JPS5615535A (en) 1979-07-18 1979-07-18 Ion source chamber

Publications (1)

Publication Number Publication Date
JPS5615535A true JPS5615535A (en) 1981-02-14

Family

ID=14019628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9119479A Pending JPS5615535A (en) 1979-07-18 1979-07-18 Ion source chamber

Country Status (1)

Country Link
JP (1) JPS5615535A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424338A (en) * 1987-07-17 1989-01-26 Nissin Electric Co Ltd Ion source
US4915979A (en) * 1988-07-05 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer treating device utilizing ECR plasma
KR20030097284A (en) * 2002-06-20 2003-12-31 삼성전자주식회사 Ion source for ion implantation equipment
KR100690447B1 (en) * 2005-07-28 2007-03-09 (주)인텍 Ion Generator and Thin Film Deposition Equipment Using the Same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424338A (en) * 1987-07-17 1989-01-26 Nissin Electric Co Ltd Ion source
US4915979A (en) * 1988-07-05 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer treating device utilizing ECR plasma
KR20030097284A (en) * 2002-06-20 2003-12-31 삼성전자주식회사 Ion source for ion implantation equipment
KR100690447B1 (en) * 2005-07-28 2007-03-09 (주)인텍 Ion Generator and Thin Film Deposition Equipment Using the Same

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