JPS5624995A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5624995A
JPS5624995A JP10157279A JP10157279A JPS5624995A JP S5624995 A JPS5624995 A JP S5624995A JP 10157279 A JP10157279 A JP 10157279A JP 10157279 A JP10157279 A JP 10157279A JP S5624995 A JPS5624995 A JP S5624995A
Authority
JP
Japan
Prior art keywords
mesa structure
solution
layer
type inp
lifetime
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10157279A
Other languages
Japanese (ja)
Other versions
JPS5914912B2 (en
Inventor
Toshio Murotani
Etsuji Omura
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP54101572A priority Critical patent/JPS5914912B2/en
Publication of JPS5624995A publication Critical patent/JPS5624995A/en
Publication of JPS5914912B2 publication Critical patent/JPS5914912B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To contrive the improvements in quantum efficiency of the semiconductor laser and the lifetime thereof by melting back a mesa structure with In solution without large deformation immediately before growing P type InP by liquid phase epitaxially on the surface of a smeiconductor crystal having mesa structure and removing the impurity on the surface and deformed layer thereon. CONSTITUTION:An N type InGaAsP 2, P type InP 3 and InGaAsP 8 are laminated on one main surface of an N type InP substrate 1. An SiO2 mask is coated thereon to form the mesa structure thereon, is contacted with In solution at 630 deg.C for approx. 1 sec. to melt back it. At this time Ga is dissolved in the In solution, and InP 3 is hardly etched not to deform the mesa structure. Then, an insulating layer 5 is coated thereon, and electrodes 6, 7 are attached thereto. Since the lateral enclosure layer of the active layer 3 is grown subsequently to the melt-back in this manner, there can be obtained a buried hetero structure having less defects to lower the oscillation threshold value and to increase the lifetime thereof in the laser.
JP54101572A 1979-08-06 1979-08-06 Manufacturing method of semiconductor laser Expired JPS5914912B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54101572A JPS5914912B2 (en) 1979-08-06 1979-08-06 Manufacturing method of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54101572A JPS5914912B2 (en) 1979-08-06 1979-08-06 Manufacturing method of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5624995A true JPS5624995A (en) 1981-03-10
JPS5914912B2 JPS5914912B2 (en) 1984-04-06

Family

ID=14304109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54101572A Expired JPS5914912B2 (en) 1979-08-06 1979-08-06 Manufacturing method of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5914912B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123085A (en) * 1983-12-08 1985-07-01 Fujitsu Ltd Semiconductor laser
JPH02213134A (en) * 1989-02-14 1990-08-24 Matsushita Electric Ind Co Ltd Etchant and etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123085A (en) * 1983-12-08 1985-07-01 Fujitsu Ltd Semiconductor laser
JPH02213134A (en) * 1989-02-14 1990-08-24 Matsushita Electric Ind Co Ltd Etchant and etching method

Also Published As

Publication number Publication date
JPS5914912B2 (en) 1984-04-06

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