JPS5643733A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5643733A
JPS5643733A JP11901179A JP11901179A JPS5643733A JP S5643733 A JPS5643733 A JP S5643733A JP 11901179 A JP11901179 A JP 11901179A JP 11901179 A JP11901179 A JP 11901179A JP S5643733 A JPS5643733 A JP S5643733A
Authority
JP
Japan
Prior art keywords
region
density region
film
silicon
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11901179A
Other languages
Japanese (ja)
Inventor
Sadaichi Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11901179A priority Critical patent/JPS5643733A/en
Publication of JPS5643733A publication Critical patent/JPS5643733A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form two regions, a low impurity density region and a high region in a same process by a method wherein a silicon nitriding film is selectively formed on a prescribed region on a semiconductor substrate surface that a boron is coated, and a heat treatment is practiced. CONSTITUTION:A boron deposit layer 4 is formed on an opening of a silicon oxidized film provided in the N type silicon substrate 1, the silicon nitriding film 5 is vapor phased on a surface thereof, an etching is performed on a desired pattern 5' to execute the heat treatment in a moist oxidized atmosphere. In this way, the boron diffusion layer 6 is formed in such a condition that the high surface density region is formed under the film 5', and the low surface density region in the region which an oxidized film 2' is formed. According to thus method, electrodes are formed at the high density region, the emitter region at the low density region in a simplified process precisely.
JP11901179A 1979-09-17 1979-09-17 Manufacture of semiconductor device Pending JPS5643733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11901179A JPS5643733A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11901179A JPS5643733A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5643733A true JPS5643733A (en) 1981-04-22

Family

ID=14750771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11901179A Pending JPS5643733A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5643733A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205965A (en) * 2009-03-04 2010-09-16 Sharp Corp Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205965A (en) * 2009-03-04 2010-09-16 Sharp Corp Method for manufacturing semiconductor device

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