JPS5643733A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5643733A
JPS5643733A JP11901179A JP11901179A JPS5643733A JP S5643733 A JPS5643733 A JP S5643733A JP 11901179 A JP11901179 A JP 11901179A JP 11901179 A JP11901179 A JP 11901179A JP S5643733 A JPS5643733 A JP S5643733A
Authority
JP
Japan
Prior art keywords
region
density region
film
silicon
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11901179A
Other languages
English (en)
Inventor
Sadaichi Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11901179A priority Critical patent/JPS5643733A/ja
Publication of JPS5643733A publication Critical patent/JPS5643733A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Formation Of Insulating Films (AREA)
JP11901179A 1979-09-17 1979-09-17 Manufacture of semiconductor device Pending JPS5643733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11901179A JPS5643733A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11901179A JPS5643733A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5643733A true JPS5643733A (en) 1981-04-22

Family

ID=14750771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11901179A Pending JPS5643733A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5643733A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205965A (ja) * 2009-03-04 2010-09-16 Sharp Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205965A (ja) * 2009-03-04 2010-09-16 Sharp Corp 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JPS55163837A (en) Manufacturing for semiconductor device
JPS5555559A (en) Method of fabricating semiconductor device
JPS5643733A (en) Manufacture of semiconductor device
JPS57207377A (en) Manufacture of semiconductor device
US3290189A (en) Method of selective diffusion from impurity source
JPS57197848A (en) Semiconductor device and manufacture thereof
JPS57211734A (en) Manufacture of semiconductor device
JPS5244169A (en) Process for production of semiconductor device
JPS5544701A (en) Manufacturing transistor
JPS5548950A (en) Manufacturing of semiconductor device
JPS56130940A (en) Manufacture of semiconductor device
JPS56153766A (en) Semiconductor device
JPS6474754A (en) Semiconductor device
JPS55143028A (en) Fabricating method of semiconductor device
JPS57176764A (en) Manufacture of semiconductor device
JPS5627971A (en) Semiconductor device and manufacture thereof
JPS5671938A (en) Manufacture of semiconductor device
JPS57143862A (en) Manufacture of semiconductor integrated circuit
JPS5633826A (en) Manufacture of target
JPS5768067A (en) Manufacture of semiconductor device
JPS57184215A (en) Forming impurity diffusion layer on surface of semiconductor element substrate
JPS5649522A (en) Manufacture of semiconductor device
JPS5499571A (en) Manufacture of current control type semiconductor device
JPS57193062A (en) Manufacture of semiconductor device
JPS5667942A (en) Forming method of electrode and wiring layer