JPS5654061A - Semiconductor - Google Patents
SemiconductorInfo
- Publication number
- JPS5654061A JPS5654061A JP12972079A JP12972079A JPS5654061A JP S5654061 A JPS5654061 A JP S5654061A JP 12972079 A JP12972079 A JP 12972079A JP 12972079 A JP12972079 A JP 12972079A JP S5654061 A JPS5654061 A JP S5654061A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diode
- type
- resistance
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
Landscapes
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To keep the potential across a diode constant by covering the portions other than the electrode leading section of a resistance with a region having the same conduction type and impurities concentration as that of the cathode region of a diode when the Zener diode and the resistance are formed in the same semiconductor substrate. CONSTITUTION:A resistance 2 is connected to the cathode side of a Zener diode 1 to make an IC. A power source 10 is connected between the anode side of a diode 1 and other terminals of the resistance 1 while a load resistance 3 is connected between the cathode side and the anode side of the diode 1 whether it may be inside or outside the IC. In such an arrangement, a P<+> type anode region 5 of a diode 1 is formed by diffusion in an N type epitaxial layer 4 which is grown in the P type semiconductor substrate. An N<+> type cathode region 7a is provided in the layer 4 while a resistance 2 is formed by diffusion in the same layer 4 as a P type region 6 like a belt. At this point, the portions other than a window 8 for leading the electrode 9 on the region 6 is covered with an N<+> type diffused region 7b the impurity concentration thereof is the same as that of the region 7a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12972079A JPS5654061A (en) | 1979-10-08 | 1979-10-08 | Semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12972079A JPS5654061A (en) | 1979-10-08 | 1979-10-08 | Semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5654061A true JPS5654061A (en) | 1981-05-13 |
Family
ID=15016527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12972079A Pending JPS5654061A (en) | 1979-10-08 | 1979-10-08 | Semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5654061A (en) |
-
1979
- 1979-10-08 JP JP12972079A patent/JPS5654061A/en active Pending
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