JPS5654061A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5654061A
JPS5654061A JP12972079A JP12972079A JPS5654061A JP S5654061 A JPS5654061 A JP S5654061A JP 12972079 A JP12972079 A JP 12972079A JP 12972079 A JP12972079 A JP 12972079A JP S5654061 A JPS5654061 A JP S5654061A
Authority
JP
Japan
Prior art keywords
region
diode
type
resistance
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12972079A
Other languages
Japanese (ja)
Inventor
Giichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12972079A priority Critical patent/JPS5654061A/en
Publication of JPS5654061A publication Critical patent/JPS5654061A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors

Landscapes

  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To keep the potential across a diode constant by covering the portions other than the electrode leading section of a resistance with a region having the same conduction type and impurities concentration as that of the cathode region of a diode when the Zener diode and the resistance are formed in the same semiconductor substrate. CONSTITUTION:A resistance 2 is connected to the cathode side of a Zener diode 1 to make an IC. A power source 10 is connected between the anode side of a diode 1 and other terminals of the resistance 1 while a load resistance 3 is connected between the cathode side and the anode side of the diode 1 whether it may be inside or outside the IC. In such an arrangement, a P<+> type anode region 5 of a diode 1 is formed by diffusion in an N type epitaxial layer 4 which is grown in the P type semiconductor substrate. An N<+> type cathode region 7a is provided in the layer 4 while a resistance 2 is formed by diffusion in the same layer 4 as a P type region 6 like a belt. At this point, the portions other than a window 8 for leading the electrode 9 on the region 6 is covered with an N<+> type diffused region 7b the impurity concentration thereof is the same as that of the region 7a.
JP12972079A 1979-10-08 1979-10-08 Semiconductor Pending JPS5654061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12972079A JPS5654061A (en) 1979-10-08 1979-10-08 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12972079A JPS5654061A (en) 1979-10-08 1979-10-08 Semiconductor

Publications (1)

Publication Number Publication Date
JPS5654061A true JPS5654061A (en) 1981-05-13

Family

ID=15016527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12972079A Pending JPS5654061A (en) 1979-10-08 1979-10-08 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5654061A (en)

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