JPS5658286A - Forming method for guard ring of avalanche photodiode - Google Patents

Forming method for guard ring of avalanche photodiode

Info

Publication number
JPS5658286A
JPS5658286A JP13438079A JP13438079A JPS5658286A JP S5658286 A JPS5658286 A JP S5658286A JP 13438079 A JP13438079 A JP 13438079A JP 13438079 A JP13438079 A JP 13438079A JP S5658286 A JPS5658286 A JP S5658286A
Authority
JP
Japan
Prior art keywords
guard ring
layer
film
diffusion
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13438079A
Other languages
Japanese (ja)
Inventor
Hiroaki Ando
Yoshihisa Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13438079A priority Critical patent/JPS5658286A/en
Publication of JPS5658286A publication Critical patent/JPS5658286A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To form a guard ring by a low concentration Cd diffusion layer simply and positively by a mechanism wherein Cd is diffused to the desired region of a semiconductor in III-V group compounds in the periodic table, a mask is made up and thermal diffusion is conducted. CONSTITUTION:An N type InGaAs semiconductor layer 22 is formed on an N type InP semiconductor layer 21, an SiO2 film 23 is further deposited, diffusion holes 24 are built up to the guard ring forming prearranged sections of the film 23, Cd is diffused from the holes 24, and high concentration Cd layers 25 are made up. an SiO2 mask 26 is deposited on the film 23 to clog the holes 24, and thermal diffusion is conducted and a low concentration Cd diffusion layer is built up. The film 23 and the mask 26 are selectively etched, and a P<+> layer 28 is formed. Thus, the low stable characteristics of dark currents are obtained because the breakdown voltage of junction made up by a guard ring 27 and the layer 22 is sufficiently greater than that of the junction built up by the layers 28 and 22 in the obtd. avalanche photodiode acquired.
JP13438079A 1979-10-18 1979-10-18 Forming method for guard ring of avalanche photodiode Pending JPS5658286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13438079A JPS5658286A (en) 1979-10-18 1979-10-18 Forming method for guard ring of avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13438079A JPS5658286A (en) 1979-10-18 1979-10-18 Forming method for guard ring of avalanche photodiode

Publications (1)

Publication Number Publication Date
JPS5658286A true JPS5658286A (en) 1981-05-21

Family

ID=15127033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13438079A Pending JPS5658286A (en) 1979-10-18 1979-10-18 Forming method for guard ring of avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS5658286A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173882A (en) * 1984-02-20 1985-09-07 Nec Corp semiconductor equipment
JPS60198786A (en) * 1984-03-22 1985-10-08 Nec Corp Semiconductor photo receiving element
US5093693A (en) * 1987-10-15 1992-03-03 Bbc Brown Boveri Ag Pn-junction with guard ring
US7112865B2 (en) 1997-06-02 2006-09-26 Fuji Electric Holdings Co., Ltd. Diode and method for manufacturing the same
CN110098270A (en) * 2019-04-18 2019-08-06 中国科学技术大学 The preparation method and diode diffusion structure of avalanche photodide diffusion structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173882A (en) * 1984-02-20 1985-09-07 Nec Corp semiconductor equipment
JPS60198786A (en) * 1984-03-22 1985-10-08 Nec Corp Semiconductor photo receiving element
US5093693A (en) * 1987-10-15 1992-03-03 Bbc Brown Boveri Ag Pn-junction with guard ring
US7112865B2 (en) 1997-06-02 2006-09-26 Fuji Electric Holdings Co., Ltd. Diode and method for manufacturing the same
US7187054B2 (en) 1997-06-02 2007-03-06 Fuji Electric Holdings Co., Ltd. Diode and method for manufacturing the same
US7276771B2 (en) 1997-06-02 2007-10-02 Fuji Electric Co., Ltd. Diode and method for manufacturing the same
CN110098270A (en) * 2019-04-18 2019-08-06 中国科学技术大学 The preparation method and diode diffusion structure of avalanche photodide diffusion structure

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