JPS5743479A - Manufacture of semiconductor photodetector - Google Patents

Manufacture of semiconductor photodetector

Info

Publication number
JPS5743479A
JPS5743479A JP55118592A JP11859280A JPS5743479A JP S5743479 A JPS5743479 A JP S5743479A JP 55118592 A JP55118592 A JP 55118592A JP 11859280 A JP11859280 A JP 11859280A JP S5743479 A JPS5743479 A JP S5743479A
Authority
JP
Japan
Prior art keywords
layer
type inp
diffusing
mask
guard ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55118592A
Other languages
Japanese (ja)
Other versions
JPS6146077B2 (en
Inventor
Fukunobu Aisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55118592A priority Critical patent/JPS5743479A/en
Priority to EP81303108A priority patent/EP0043734B1/en
Priority to US06/281,304 priority patent/US4442444A/en
Priority to DE8181303108T priority patent/DE3172668D1/en
Publication of JPS5743479A publication Critical patent/JPS5743479A/en
Publication of JPS6146077B2 publication Critical patent/JPS6146077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To form a guard ring in a step of diffusing at low temperature for a short time by selectively removing a semiconductor layer forming the surface of a semiconductor photodetector prior to the step of diffusing impurity. CONSTITUTION:An n type InP buffer layer 2, an n type InGaAs layer 3, an n type InP layer 4, and an n type InP layer 5 are sequentially formed on an n<+>-type InP substrate 1. Then, an SiO2 film mask 6 is formed on the layer 5, and the layer 5 not with the mask 6 is removed by a selective etching. After the mask 6 is separated, a diffusing mask 7 is formed, Cd is diffused in the layers 4, 5 to simultaneously form p<+> type InP regions 8, 9. The region 8 becomes a guard ring, and the region 9 becmes a photodetector. Since the formation of the guard ring can be accordingly formed in the step of diffusing at a low temperature for a short time, it can reduce the crystalline defects, thereby obtaining a stable avalanche breakdown.
JP55118592A 1980-07-08 1980-08-28 Manufacture of semiconductor photodetector Granted JPS5743479A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55118592A JPS5743479A (en) 1980-08-28 1980-08-28 Manufacture of semiconductor photodetector
EP81303108A EP0043734B1 (en) 1980-07-08 1981-07-08 Avalanche photodiodes
US06/281,304 US4442444A (en) 1980-07-08 1981-07-08 Avalanche photodiodes
DE8181303108T DE3172668D1 (en) 1980-07-08 1981-07-08 Avalanche photodiodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55118592A JPS5743479A (en) 1980-08-28 1980-08-28 Manufacture of semiconductor photodetector

Publications (2)

Publication Number Publication Date
JPS5743479A true JPS5743479A (en) 1982-03-11
JPS6146077B2 JPS6146077B2 (en) 1986-10-11

Family

ID=14740393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55118592A Granted JPS5743479A (en) 1980-07-08 1980-08-28 Manufacture of semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5743479A (en)

Also Published As

Publication number Publication date
JPS6146077B2 (en) 1986-10-11

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