JPS5671981A - Preparation method of semiconductor system - Google Patents

Preparation method of semiconductor system

Info

Publication number
JPS5671981A
JPS5671981A JP14981879A JP14981879A JPS5671981A JP S5671981 A JPS5671981 A JP S5671981A JP 14981879 A JP14981879 A JP 14981879A JP 14981879 A JP14981879 A JP 14981879A JP S5671981 A JPS5671981 A JP S5671981A
Authority
JP
Japan
Prior art keywords
electrode
walls
vapored
fet
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14981879A
Other languages
Japanese (ja)
Other versions
JPS6161549B2 (en
Inventor
Shunji Otani
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP14981879A priority Critical patent/JPS5671981A/en
Priority to US06/206,215 priority patent/US4377899A/en
Priority to DE19803043289 priority patent/DE3043289A1/en
Priority to FR8024416A priority patent/FR2474761B1/en
Publication of JPS5671981A publication Critical patent/JPS5671981A/en
Publication of JPS6161549B2 publication Critical patent/JPS6161549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain an FET having a short gate by a method wherein using two resist walls each of which is close to each other and selecting a proper evaporation angle, an electrode is formed. CONSTITUTION:A mesa type N epitaxial layer 7 is installed on a semi-insulating GaAs substrate 6, and resist walls 8, 9 which are extending to a direction are formed making each of them be close to each other. Since the surface is flat and smooth, working of a micro pattern of approximately 1mum can be easily performed. An ohmic metal for the electrode use is vapored from a slant 2 directions and source and drain electrodes 10, 11 are installed. And next thereto, Al and others for the Schottky barrier forming use is vapored to the substrate principal surface from a vertical direction to form a gate electrode 12 on an operation layer 7 between the walls 8 and 9. The resists 8, 9 are removed and a heat processing is performed to form a good ohmic electrode. With this constitution, by means of a self matching, an FET having an extremely short gate length is obtained with a good yield.
JP14981879A 1979-11-19 1979-11-19 Preparation method of semiconductor system Granted JPS5671981A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP14981879A JPS5671981A (en) 1979-11-19 1979-11-19 Preparation method of semiconductor system
US06/206,215 US4377899A (en) 1979-11-19 1980-11-12 Method of manufacturing Schottky field-effect transistors utilizing shadow masking
DE19803043289 DE3043289A1 (en) 1979-11-19 1980-11-17 MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE
FR8024416A FR2474761B1 (en) 1979-11-19 1980-11-18 METHOD FOR MANUFACTURING SCHOTTKY BARRIER FIELD-EFFECT TRANSISTORS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14981879A JPS5671981A (en) 1979-11-19 1979-11-19 Preparation method of semiconductor system

Publications (2)

Publication Number Publication Date
JPS5671981A true JPS5671981A (en) 1981-06-15
JPS6161549B2 JPS6161549B2 (en) 1986-12-26

Family

ID=15483365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14981879A Granted JPS5671981A (en) 1979-11-19 1979-11-19 Preparation method of semiconductor system

Country Status (1)

Country Link
JP (1) JPS5671981A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529952A (en) * 1994-09-20 1996-06-25 Texas Instruments Incorporated Method of fabricating lateral resonant tunneling structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635364A (en) * 1986-06-25 1988-01-11 Ricoh Co Ltd Electrophotographic copying device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529952A (en) * 1994-09-20 1996-06-25 Texas Instruments Incorporated Method of fabricating lateral resonant tunneling structure

Also Published As

Publication number Publication date
JPS6161549B2 (en) 1986-12-26

Similar Documents

Publication Publication Date Title
US4040168A (en) Fabrication method for a dual gate field-effect transistor
EP0083716A3 (en) Process for forming iii-v semiconductor mesfet devices, having self-aligned raised source and drain regions
KR940008230B1 (en) Hetero junction fet
GB1413058A (en) Semoconductor devices
JPS5671981A (en) Preparation method of semiconductor system
JPS5646562A (en) Semiconductor device
JPS5691477A (en) Semiconductor
JPS57193070A (en) Forming method for gate electrode of schottky junction gate type field effect transistor
JPS562625A (en) Manufacture of epitaxial wafer
GB2259806A (en) Semiconductor device and method of producing it
JPS6376380A (en) Semiconductor device
JPS5671980A (en) Schottky barrier gate type field effect transistor and preparation method thereof
JPS5487075A (en) Manufacture of semiconductor device
JPS5752174A (en) Multigate field effect transistor
JPS6122873B2 (en)
JPS574169A (en) Gaas field-effect transistor
JPS54133080A (en) Semiconductor device
JPS5724569A (en) Uhf band gaas fet
JPS57178374A (en) Junction type field-efect transistor and its manufacture
JPS6486564A (en) Manufacture of field-effect transistor
JPS5676580A (en) Lateral field effect transistor and manufacture thereof
JPS5739584A (en) Semiconductor device and manufacture thereof
JPS6451666A (en) Semiconductor device and its manufacture
JPS6439073A (en) Compound semiconductor device
JPS57136374A (en) Manufacture of semiconductor device