JPS5688390A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5688390A
JPS5688390A JP16593879A JP16593879A JPS5688390A JP S5688390 A JPS5688390 A JP S5688390A JP 16593879 A JP16593879 A JP 16593879A JP 16593879 A JP16593879 A JP 16593879A JP S5688390 A JPS5688390 A JP S5688390A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor laser
manufacture
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16593879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237835B2 (cs
Inventor
Isamu Sakuma
Hideo Kawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16593879A priority Critical patent/JPS5688390A/ja
Publication of JPS5688390A publication Critical patent/JPS5688390A/ja
Publication of JPS6237835B2 publication Critical patent/JPS6237835B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP16593879A 1979-12-20 1979-12-20 Manufacture of semiconductor laser Granted JPS5688390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16593879A JPS5688390A (en) 1979-12-20 1979-12-20 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16593879A JPS5688390A (en) 1979-12-20 1979-12-20 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5688390A true JPS5688390A (en) 1981-07-17
JPS6237835B2 JPS6237835B2 (cs) 1987-08-14

Family

ID=15821861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16593879A Granted JPS5688390A (en) 1979-12-20 1979-12-20 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5688390A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882589A (ja) * 1981-11-12 1983-05-18 Nec Corp 半導体レ−ザ
JPS58131784A (ja) * 1982-01-29 1983-08-05 Nec Corp 埋め込みヘテロ構造半導体レ−ザ
JPS60115284A (ja) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ及びその製法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882589A (ja) * 1981-11-12 1983-05-18 Nec Corp 半導体レ−ザ
JPS58131784A (ja) * 1982-01-29 1983-08-05 Nec Corp 埋め込みヘテロ構造半導体レ−ザ
JPS60115284A (ja) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ及びその製法

Also Published As

Publication number Publication date
JPS6237835B2 (cs) 1987-08-14

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