JPS57104276A - Amorphous silicon thin film photoelectric element - Google Patents

Amorphous silicon thin film photoelectric element

Info

Publication number
JPS57104276A
JPS57104276A JP55181150A JP18115080A JPS57104276A JP S57104276 A JPS57104276 A JP S57104276A JP 55181150 A JP55181150 A JP 55181150A JP 18115080 A JP18115080 A JP 18115080A JP S57104276 A JPS57104276 A JP S57104276A
Authority
JP
Japan
Prior art keywords
amorphous silicon
type amorphous
silane
thin film
glow discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55181150A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6216031B2 (fr
Inventor
Yoshihiro Hamakawa
Yoshihisa Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP55181150A priority Critical patent/JPS57104276A/ja
Priority to US06/253,141 priority patent/US4385199A/en
Priority to CA000391378A priority patent/CA1176740A/fr
Priority to DE8181110111T priority patent/DE3176919D1/de
Priority to AU78224/81A priority patent/AU558650B2/en
Priority to EP81110111A priority patent/EP0053402B1/fr
Priority to MX81190403A priority patent/MX157367A/es
Priority to AT81110111T priority patent/ATE38296T1/de
Publication of JPS57104276A publication Critical patent/JPS57104276A/ja
Priority to US06/420,711 priority patent/US4385200A/en
Publication of JPS6216031B2 publication Critical patent/JPS6216031B2/ja
Priority to SG65589A priority patent/SG65589G/en
Priority to HK796/89A priority patent/HK79689A/xx
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP55181150A 1980-02-04 1980-12-19 Amorphous silicon thin film photoelectric element Granted JPS57104276A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP55181150A JPS57104276A (en) 1980-12-19 1980-12-19 Amorphous silicon thin film photoelectric element
US06/253,141 US4385199A (en) 1980-12-03 1981-04-10 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
CA000391378A CA1176740A (fr) 1980-12-03 1981-12-02 Cellule photovoltaique a haute tension ayant une heterojonction de semiconducteur amorphe et de silicium amorphe
EP81110111A EP0053402B1 (fr) 1980-12-03 1981-12-03 Cellule photovoltaique pin à hétéro-jonction entre un composé de silicium amorpheet du silicium amorphe
AU78224/81A AU558650B2 (en) 1980-12-03 1981-12-03 Amorphous semiconductor high-voltage photovoltaic cell
DE8181110111T DE3176919D1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
MX81190403A MX157367A (es) 1980-02-04 1981-12-03 Mejoras a celda fotovoltaica de tipo de silicio amorfo p-i-n
AT81110111T ATE38296T1 (de) 1980-12-03 1981-12-03 Photovolteische zelle vom pin-typ mit heterouebergang zwischen einer amorphen siliziumverbindung und amorphem silizium.
US06/420,711 US4385200A (en) 1980-12-03 1982-09-21 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
SG65589A SG65589G (en) 1980-12-03 1989-09-20 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon
HK796/89A HK79689A (en) 1980-12-03 1989-10-05 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55181150A JPS57104276A (en) 1980-12-19 1980-12-19 Amorphous silicon thin film photoelectric element

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP58044691A Division JPS58190073A (ja) 1983-03-16 1983-03-16 薄膜光電素子
JP58044690A Division JPS58190814A (ja) 1983-03-16 1983-03-16 アモルフアスシリコンカ−バイドの製造方法

Publications (2)

Publication Number Publication Date
JPS57104276A true JPS57104276A (en) 1982-06-29
JPS6216031B2 JPS6216031B2 (fr) 1987-04-10

Family

ID=16095750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55181150A Granted JPS57104276A (en) 1980-02-04 1980-12-19 Amorphous silicon thin film photoelectric element

Country Status (1)

Country Link
JP (1) JPS57104276A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127832A (ja) * 1983-01-12 1984-07-23 Agency Of Ind Science & Technol プラズマｃｖｄ装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513939Y2 (fr) * 1974-03-27 1980-03-29
JPS5549304Y2 (fr) * 1975-04-23 1980-11-17
JPS5664476A (en) * 1979-08-30 1981-06-01 Plessey Overseas Armophous silicon solar battery

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513939Y2 (fr) * 1974-03-27 1980-03-29
JPS5549304Y2 (fr) * 1975-04-23 1980-11-17
JPS5664476A (en) * 1979-08-30 1981-06-01 Plessey Overseas Armophous silicon solar battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127832A (ja) * 1983-01-12 1984-07-23 Agency Of Ind Science & Technol プラズマｃｖｄ装置

Also Published As

Publication number Publication date
JPS6216031B2 (fr) 1987-04-10

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