JPS57149727A - Heating base of a vapor growth semiconductor - Google Patents

Heating base of a vapor growth semiconductor

Info

Publication number
JPS57149727A
JPS57149727A JP3485381A JP3485381A JPS57149727A JP S57149727 A JPS57149727 A JP S57149727A JP 3485381 A JP3485381 A JP 3485381A JP 3485381 A JP3485381 A JP 3485381A JP S57149727 A JPS57149727 A JP S57149727A
Authority
JP
Japan
Prior art keywords
wafer
vapor growth
concave part
heating base
fringe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3485381A
Other languages
English (en)
Inventor
Masanori Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3485381A priority Critical patent/JPS57149727A/ja
Publication of JPS57149727A publication Critical patent/JPS57149727A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3485381A 1981-03-11 1981-03-11 Heating base of a vapor growth semiconductor Pending JPS57149727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3485381A JPS57149727A (en) 1981-03-11 1981-03-11 Heating base of a vapor growth semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3485381A JPS57149727A (en) 1981-03-11 1981-03-11 Heating base of a vapor growth semiconductor

Publications (1)

Publication Number Publication Date
JPS57149727A true JPS57149727A (en) 1982-09-16

Family

ID=12425729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3485381A Pending JPS57149727A (en) 1981-03-11 1981-03-11 Heating base of a vapor growth semiconductor

Country Status (1)

Country Link
JP (1) JPS57149727A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116229U (ja) * 1984-01-10 1985-08-06 日本電気株式会社 半導体ウエ−ハの発熱担体
FR2641901A1 (fr) * 1989-01-13 1990-07-20 Toshiba Ceramics Co Suscepteur destine a etre utilise dans un dispositif vertical pour realiser une croissance en phase vapeur

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116229U (ja) * 1984-01-10 1985-08-06 日本電気株式会社 半導体ウエ−ハの発熱担体
FR2641901A1 (fr) * 1989-01-13 1990-07-20 Toshiba Ceramics Co Suscepteur destine a etre utilise dans un dispositif vertical pour realiser une croissance en phase vapeur

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