JPS57149772A - Gate turn off thyristor - Google Patents
Gate turn off thyristorInfo
- Publication number
- JPS57149772A JPS57149772A JP56035826A JP3582681A JPS57149772A JP S57149772 A JPS57149772 A JP S57149772A JP 56035826 A JP56035826 A JP 56035826A JP 3582681 A JP3582681 A JP 3582681A JP S57149772 A JPS57149772 A JP S57149772A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- layer
- gate
- cathode
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE:To improve turn off performance and to permit high-frequency operation as well by a method wherein cathode N layer are formed by split and surface gate layers and buried gate layers are formed on a gate P layer by dispersion. CONSTITUTION:Cathode N2 layers are formed with broad rectangular shape and buried gate layers 4 formed low-resistance layers P2<++> are arranged in a P2 layer corresponding to the central sections of the N2 layers by diffusion. And surface gate layers 5 consisting of high-impurity layers are arranged on the surface of the P2 layer lain between each N2 layer by diffusion. Oxide films 6 are arranged on the surfaces of the layes 5 by riding on the N2 layers by diffusion and the short-circuits between the N2 layers and the layers 5 are prevented when a cathode electrode 7 is covered on the whole surfaces of the N2 layers. And a load current flowing to the N2 layers is turned off by the gate action at both the layers 4 and layers 5. In this composition, the width of effective cathode layers becomes narrow even if the width of the layers 4 is made narrower than the width of the N2 layers. Furthermore, the influence of autodope can be eliminated even if each interval Wg of the layers 4 is broaden. As a result, turn on time and turn off time can be shortened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56035826A JPS57149772A (en) | 1981-03-12 | 1981-03-12 | Gate turn off thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56035826A JPS57149772A (en) | 1981-03-12 | 1981-03-12 | Gate turn off thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57149772A true JPS57149772A (en) | 1982-09-16 |
| JPH0136259B2 JPH0136259B2 (en) | 1989-07-31 |
Family
ID=12452753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56035826A Granted JPS57149772A (en) | 1981-03-12 | 1981-03-12 | Gate turn off thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57149772A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60166161U (en) * | 1984-04-11 | 1985-11-05 | 株式会社明電舎 | GTO thyristor |
-
1981
- 1981-03-12 JP JP56035826A patent/JPS57149772A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60166161U (en) * | 1984-04-11 | 1985-11-05 | 株式会社明電舎 | GTO thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0136259B2 (en) | 1989-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS56169368A (en) | High withstand voltage mos field effect semiconductor device | |
| EP0217406A3 (en) | Thin-film transistor and method of fabricating the same | |
| JPS5598858A (en) | Gate turn-off thyristor | |
| JPS5754370A (en) | Insulating gate type transistor | |
| JPS5312281A (en) | Semiconductor control rectifying element | |
| JPS57149772A (en) | Gate turn off thyristor | |
| JPS5778172A (en) | Gate turn-off thyristor | |
| JPS55140262A (en) | Semiconductor device | |
| JPS55108768A (en) | Electrostatic induction thyristor | |
| JPS5526624A (en) | Semiconductor device | |
| JPS57176781A (en) | Superconductive device | |
| JPS56133876A (en) | Manufacture of junction type field effect semiconductor device | |
| JPS554958A (en) | Field-effect type switching element | |
| JPS577963A (en) | Charge transfer element | |
| JPS56110288A (en) | Semiconductor laser element | |
| JPS6461059A (en) | Semiconductor device | |
| JPS57136367A (en) | Rectifier controlled with semiconductor | |
| JPS5791566A (en) | Solar battery element | |
| JPS6490560A (en) | Thin-film transistor | |
| JPS57197869A (en) | Semiconductor device | |
| JPS6461060A (en) | Semiconductor device | |
| JPS57141959A (en) | Electrostatic induction thyristor | |
| JPS6417475A (en) | Manufacture of mos semiconductor device | |
| JPS5640277A (en) | Semiconductor device | |
| JPS56157068A (en) | Field effect transistor |