JPS57152183A - Manufacture of multiple wave length integrated semiconductor light emitting device - Google Patents

Manufacture of multiple wave length integrated semiconductor light emitting device

Info

Publication number
JPS57152183A
JPS57152183A JP3757281A JP3757281A JPS57152183A JP S57152183 A JPS57152183 A JP S57152183A JP 3757281 A JP3757281 A JP 3757281A JP 3757281 A JP3757281 A JP 3757281A JP S57152183 A JPS57152183 A JP S57152183A
Authority
JP
Japan
Prior art keywords
layer
type inp
ingaasp
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3757281A
Other languages
Japanese (ja)
Other versions
JPS6248917B2 (en
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3757281A priority Critical patent/JPS57152183A/en
Publication of JPS57152183A publication Critical patent/JPS57152183A/en
Publication of JPS6248917B2 publication Critical patent/JPS6248917B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To decrease the number of liquid phase growth processes in the manufacture of a multiple wave length integrated semiconductor light emitting device by a method wherein a stepped ladder part is formed wherein each step is a semiconductor layer with a different inhibiting band width and each step is provided with a stripe shaped oscillating part. CONSTITUTION:On an N type InP substrate 1, after the formation of an N type InP buffer layer 2, an InGaAsP 1st active layer (lambda=1.2mum), N type InP layer, InGaAsP 2nd active layer (lambda=1.3mum), N type InP layer, InGaAsP 3rd active layer (lambda=1.55mum) are laid in succession. The active layers are formed into a ladder wherein each of them is partially exposed. Every component of the ladder is provided with a stripe shaped ridge and then a P type InP current stopping layer 5, N type InP current confining layer 6, P type InP imbedded layer 7, and N type InGaAsP electrode forming layer 8 are grown. This results in a decrease in the number of liquid phase growth processes in the manufacturing of a multiple wave length light emitting device.
JP3757281A 1981-03-16 1981-03-16 Manufacture of multiple wave length integrated semiconductor light emitting device Granted JPS57152183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3757281A JPS57152183A (en) 1981-03-16 1981-03-16 Manufacture of multiple wave length integrated semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3757281A JPS57152183A (en) 1981-03-16 1981-03-16 Manufacture of multiple wave length integrated semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS57152183A true JPS57152183A (en) 1982-09-20
JPS6248917B2 JPS6248917B2 (en) 1987-10-16

Family

ID=12501238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3757281A Granted JPS57152183A (en) 1981-03-16 1981-03-16 Manufacture of multiple wave length integrated semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS57152183A (en)

Also Published As

Publication number Publication date
JPS6248917B2 (en) 1987-10-16

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