JPS57152183A - Manufacture of multiple wave length integrated semiconductor light emitting device - Google Patents

Manufacture of multiple wave length integrated semiconductor light emitting device

Info

Publication number
JPS57152183A
JPS57152183A JP3757281A JP3757281A JPS57152183A JP S57152183 A JPS57152183 A JP S57152183A JP 3757281 A JP3757281 A JP 3757281A JP 3757281 A JP3757281 A JP 3757281A JP S57152183 A JPS57152183 A JP S57152183A
Authority
JP
Japan
Prior art keywords
layer
type inp
ingaasp
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3757281A
Other languages
English (en)
Other versions
JPS6248917B2 (ja
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3757281A priority Critical patent/JPS57152183A/ja
Publication of JPS57152183A publication Critical patent/JPS57152183A/ja
Publication of JPS6248917B2 publication Critical patent/JPS6248917B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3757281A 1981-03-16 1981-03-16 Manufacture of multiple wave length integrated semiconductor light emitting device Granted JPS57152183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3757281A JPS57152183A (en) 1981-03-16 1981-03-16 Manufacture of multiple wave length integrated semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3757281A JPS57152183A (en) 1981-03-16 1981-03-16 Manufacture of multiple wave length integrated semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS57152183A true JPS57152183A (en) 1982-09-20
JPS6248917B2 JPS6248917B2 (ja) 1987-10-16

Family

ID=12501238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3757281A Granted JPS57152183A (en) 1981-03-16 1981-03-16 Manufacture of multiple wave length integrated semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS57152183A (ja)

Also Published As

Publication number Publication date
JPS6248917B2 (ja) 1987-10-16

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