JPS57159063A - Transistor - Google Patents

Transistor

Info

Publication number
JPS57159063A
JPS57159063A JP56043867A JP4386781A JPS57159063A JP S57159063 A JPS57159063 A JP S57159063A JP 56043867 A JP56043867 A JP 56043867A JP 4386781 A JP4386781 A JP 4386781A JP S57159063 A JPS57159063 A JP S57159063A
Authority
JP
Japan
Prior art keywords
bonding pad
shape
bonding
pad
sealing type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56043867A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0231496B2 (2
Inventor
Kazuo Kanbayashi
Masayuki Horie
Nobukatsu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56043867A priority Critical patent/JPS57159063A/ja
Publication of JPS57159063A publication Critical patent/JPS57159063A/ja
Publication of JPH0231496B2 publication Critical patent/JPH0231496B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01551Changing the shapes of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07511Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)
JP56043867A 1981-03-27 1981-03-27 Transistor Granted JPS57159063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56043867A JPS57159063A (en) 1981-03-27 1981-03-27 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56043867A JPS57159063A (en) 1981-03-27 1981-03-27 Transistor

Publications (2)

Publication Number Publication Date
JPS57159063A true JPS57159063A (en) 1982-10-01
JPH0231496B2 JPH0231496B2 (2) 1990-07-13

Family

ID=12675643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56043867A Granted JPS57159063A (en) 1981-03-27 1981-03-27 Transistor

Country Status (1)

Country Link
JP (1) JPS57159063A (2)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5173977U (2) * 1974-12-05 1976-06-10
JPS55111141A (en) * 1979-02-20 1980-08-27 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5173977U (2) * 1974-12-05 1976-06-10
JPS55111141A (en) * 1979-02-20 1980-08-27 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0231496B2 (2) 1990-07-13

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