JPS57167634A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57167634A JPS57167634A JP56035021A JP3502181A JPS57167634A JP S57167634 A JPS57167634 A JP S57167634A JP 56035021 A JP56035021 A JP 56035021A JP 3502181 A JP3502181 A JP 3502181A JP S57167634 A JPS57167634 A JP S57167634A
- Authority
- JP
- Japan
- Prior art keywords
- type
- epitaxial layer
- impurity
- onto
- crystal defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56035021A JPS57167634A (en) | 1981-03-11 | 1981-03-11 | Semiconductor device |
| DE8282301212T DE3280219D1 (de) | 1981-03-11 | 1982-03-10 | Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers. |
| EP82301212A EP0060676B1 (en) | 1981-03-11 | 1982-03-10 | A method for the production of a semiconductor device comprising annealing a silicon wafer |
| IE559/82A IE55966B1 (en) | 1981-03-11 | 1982-03-11 | A method for the production of a semiconductor device comprising annealing a silicon wafer |
| US06/598,544 US4597804A (en) | 1981-03-11 | 1984-04-12 | Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56035021A JPS57167634A (en) | 1981-03-11 | 1981-03-11 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57167634A true JPS57167634A (en) | 1982-10-15 |
| JPS6315742B2 JPS6315742B2 (mo) | 1988-04-06 |
Family
ID=12430402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56035021A Granted JPS57167634A (en) | 1981-03-11 | 1981-03-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57167634A (mo) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03117423U (mo) * | 1990-03-14 | 1991-12-04 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617011A (en) * | 1979-07-23 | 1981-02-18 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPS5717125A (en) * | 1980-07-04 | 1982-01-28 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS5787119A (en) * | 1980-11-19 | 1982-05-31 | Toshiba Corp | Manufacture of semiconductor device |
-
1981
- 1981-03-11 JP JP56035021A patent/JPS57167634A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617011A (en) * | 1979-07-23 | 1981-02-18 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPS5717125A (en) * | 1980-07-04 | 1982-01-28 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS5787119A (en) * | 1980-11-19 | 1982-05-31 | Toshiba Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6315742B2 (mo) | 1988-04-06 |
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