JPS5718366A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5718366A
JPS5718366A JP9352780A JP9352780A JPS5718366A JP S5718366 A JPS5718366 A JP S5718366A JP 9352780 A JP9352780 A JP 9352780A JP 9352780 A JP9352780 A JP 9352780A JP S5718366 A JPS5718366 A JP S5718366A
Authority
JP
Japan
Prior art keywords
insulating film
film
silicon
semiconductor device
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9352780A
Other languages
Japanese (ja)
Inventor
Kazunari Shirai
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9352780A priority Critical patent/JPS5718366A/en
Publication of JPS5718366A publication Critical patent/JPS5718366A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To enable the integration of a semiconductor device by covering source and drain electrode contacting windows formed in advance by a self-alignment system with nitrided silicon film by an ion injection and a heat treatment, forming an insulating film on the side surface of a silicon gate electrode and removing the nitrided silicon film. CONSTITUTION:A field insulating film 2 and an active region opening 24 are formed by a selective oxide forming method on a one conductive semiconductor substrate, a silicon insulating film formed then is patterned, and a gate insulated film 3, a silicon gate electrode 4 and a protective insulating film 5 are sequentially formed in the opening 2A. Subsequently, nitrogen ions are injected, a heat treatment is then conducted, and nitrided silicon films 6 covering at least source and drain electrode contacting windows are formed. Then, an insulating film 7 is formed on the side surface of the electrode 4, thereafter the film 6 is removed, and the window is exposed. The electrode contacting window is thus formed by a self-alignment system, and the integration of the semiconductor device can be performed.
JP9352780A 1980-07-09 1980-07-09 Manufacture of semiconductor device Pending JPS5718366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9352780A JPS5718366A (en) 1980-07-09 1980-07-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9352780A JPS5718366A (en) 1980-07-09 1980-07-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5718366A true JPS5718366A (en) 1982-01-30

Family

ID=14084776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9352780A Pending JPS5718366A (en) 1980-07-09 1980-07-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5718366A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3140654A1 (en) * 1980-10-17 1982-06-24 Nippon Columbia K.K., Tokyo CIRCUIT FOR ELIMINATION OF DISTORTION

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292486A (en) * 1976-01-30 1977-08-03 Hitachi Ltd Manufacture of mis-type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292486A (en) * 1976-01-30 1977-08-03 Hitachi Ltd Manufacture of mis-type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3140654A1 (en) * 1980-10-17 1982-06-24 Nippon Columbia K.K., Tokyo CIRCUIT FOR ELIMINATION OF DISTORTION

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