JPS57190350A - Manufacrure of semiconductor device - Google Patents

Manufacrure of semiconductor device

Info

Publication number
JPS57190350A
JPS57190350A JP56075188A JP7518881A JPS57190350A JP S57190350 A JPS57190350 A JP S57190350A JP 56075188 A JP56075188 A JP 56075188A JP 7518881 A JP7518881 A JP 7518881A JP S57190350 A JPS57190350 A JP S57190350A
Authority
JP
Japan
Prior art keywords
type
films
layer
layers
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56075188A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6242397B2 (th
Inventor
Shuichi Kameyama
Koichi Kanzaki
Yoshitaka Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56075188A priority Critical patent/JPS57190350A/ja
Priority to US06/378,480 priority patent/US4433470A/en
Publication of JPS57190350A publication Critical patent/JPS57190350A/ja
Publication of JPS6242397B2 publication Critical patent/JPS6242397B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56075188A 1981-05-19 1981-05-19 Manufacrure of semiconductor device Granted JPS57190350A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56075188A JPS57190350A (en) 1981-05-19 1981-05-19 Manufacrure of semiconductor device
US06/378,480 US4433470A (en) 1981-05-19 1982-05-14 Method for manufacturing semiconductor device utilizing selective etching and diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075188A JPS57190350A (en) 1981-05-19 1981-05-19 Manufacrure of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57190350A true JPS57190350A (en) 1982-11-22
JPS6242397B2 JPS6242397B2 (th) 1987-09-08

Family

ID=13568968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56075188A Granted JPS57190350A (en) 1981-05-19 1981-05-19 Manufacrure of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57190350A (th)

Also Published As

Publication number Publication date
JPS6242397B2 (th) 1987-09-08

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