JPS57197836A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57197836A
JPS57197836A JP56083304A JP8330481A JPS57197836A JP S57197836 A JPS57197836 A JP S57197836A JP 56083304 A JP56083304 A JP 56083304A JP 8330481 A JP8330481 A JP 8330481A JP S57197836 A JPS57197836 A JP S57197836A
Authority
JP
Japan
Prior art keywords
groove
heat treatment
chip
thermal strain
slip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56083304A
Other languages
Japanese (ja)
Inventor
Yuji Furumura
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56083304A priority Critical patent/JPS57197836A/en
Publication of JPS57197836A publication Critical patent/JPS57197836A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Dicing (AREA)

Abstract

PURPOSE:To keep the slip line due to thermal strain in a process of heat treatment in a groove to eliminate the thermal strain, by forming a groove along a chip cut line scheduled on a wafer prior to the heat treatment of the semiconductor wafer. CONSTITUTION:The groove 3 is formed along a cut line scheduled on the semiconductor wafer 100 for required heat treatment to cause only the thermal strain accompanied by heat treatment with slip line. These slip lines 1 are all generated in the groove by this groove 3 not on each chip. Thus, the yield and quality as a chip is improved.
JP56083304A 1981-05-29 1981-05-29 Manufacture of semiconductor device Pending JPS57197836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56083304A JPS57197836A (en) 1981-05-29 1981-05-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56083304A JPS57197836A (en) 1981-05-29 1981-05-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57197836A true JPS57197836A (en) 1982-12-04

Family

ID=13798665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56083304A Pending JPS57197836A (en) 1981-05-29 1981-05-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57197836A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61247017A (en) * 1985-04-24 1986-11-04 Mitsubishi Electric Corp Preparation of semiconductor device
JPH0529454A (en) * 1991-07-19 1993-02-05 Seikosha Co Ltd Manufacture of semiconductor integrated circuit chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61247017A (en) * 1985-04-24 1986-11-04 Mitsubishi Electric Corp Preparation of semiconductor device
JPH0529454A (en) * 1991-07-19 1993-02-05 Seikosha Co Ltd Manufacture of semiconductor integrated circuit chip

Similar Documents

Publication Publication Date Title
DE2960880D1 (en) Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration
JPS5333050A (en) Production of semiconductor element
DE3064553D1 (en) Process for producing bipolar semiconductor device
GB2045639B (en) Process for the production of epitaxial layers of semiconductor material on monocrystalline substrates
JPS53100767A (en) Production of semiconductor device
JPS53142877A (en) Manufacture for compound semiconductor device
JPS5412587A (en) Warpage reducing method of lithium tantalate single crystal wafers
JPS54586A (en) Production of semiconductor device
JPS5481180A (en) Growth of single crystal
JPS5419624A (en) Adhering method of adhesive tape
DE3271874D1 (en) Indium-antimony complex crystal semiconductor and process for production thereof
JPS5326663A (en) Manu facture of semiconductor device
JPS5344181A (en) Production of semiconductor device
JPS5284971A (en) Production of semiconductor device
JPS5299065A (en) Production of semiconductor device
JPS526091A (en) Production method of semiconductor device
JPS5348666A (en) Production of semiconductor single crystal production
JPS51140470A (en) Method of cutting semiconductor crystal
JPS5230163A (en) Method for junction of semiconductor parts
JPS51140198A (en) Crystal working process
JPS51131277A (en) Semi-conductor unit manufacturing process
JPS51138166A (en) Production method of semiconductor device
JPS5273673A (en) Production of semiconductor device
JPS5285465A (en) Production of semiconductor device
JPS52143767A (en) Production of semiconductor device