JPS57211237A - Plasma reaction device - Google Patents
Plasma reaction deviceInfo
- Publication number
- JPS57211237A JPS57211237A JP56095354A JP9535481A JPS57211237A JP S57211237 A JPS57211237 A JP S57211237A JP 56095354 A JP56095354 A JP 56095354A JP 9535481 A JP9535481 A JP 9535481A JP S57211237 A JPS57211237 A JP S57211237A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- electrode
- diffusion plate
- gas
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To enable to convert reaction gas into plasma sufficiently and uniformly in a short time by a method wherein a gas diffusion means to convert a flow of reaction gas into a turbulent flow is provided in a reaction vessel. CONSTITUTION:Plate electrodes 12A, 12B, of two sheets are arranged facing with each other in the reaction vessel 10. Semiconductor wafers 14 to be treated with plasma reaction are supported in the electrode 12A. A gas diffusion plate 24 formed with plural number of gas flow holes 26 is arragned between the electrodes 12A, 12b thereof. The diffusion plate 24 thereof is connected to a high frequency electric power source 20, and performs also the part as the electrode. Accordingly the diffusion plate 24 forms the electrode pair with the respective electrodes 12A, 12B. As a result, reaction gas flowed into the vessel 10 is converted into plasma at first in the gap between the electrode 12B and the diffusion plate 24, and then reaction gas not converted into plasma is converted into the turbulent flow through the holes 26 in the diffusion plate 24, and is convetyed into plasma in the gap between the diffusion plate 24 and the electrode 12A. Accordingly two times conversion are performed in the gap between the two electrode pairs, and the more favorable ratio of conversion into plasma can be obtained in a short time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56095354A JPS57211237A (en) | 1981-06-22 | 1981-06-22 | Plasma reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56095354A JPS57211237A (en) | 1981-06-22 | 1981-06-22 | Plasma reaction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57211237A true JPS57211237A (en) | 1982-12-25 |
| JPS6410933B2 JPS6410933B2 (en) | 1989-02-22 |
Family
ID=14135316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56095354A Granted JPS57211237A (en) | 1981-06-22 | 1981-06-22 | Plasma reaction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57211237A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60239015A (en) * | 1984-05-11 | 1985-11-27 | Toyobo Co Ltd | Formation of amorphous silicon film |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022255745A1 (en) * | 2021-06-01 | 2022-12-08 | 주식회사 엘지에너지솔루션 | All-solid-state lithium secondary battery and manufacturing method therefor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5467377A (en) * | 1977-11-09 | 1979-05-30 | Hitachi Ltd | Plasma processing apparatus |
-
1981
- 1981-06-22 JP JP56095354A patent/JPS57211237A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5467377A (en) * | 1977-11-09 | 1979-05-30 | Hitachi Ltd | Plasma processing apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60239015A (en) * | 1984-05-11 | 1985-11-27 | Toyobo Co Ltd | Formation of amorphous silicon film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6410933B2 (en) | 1989-02-22 |
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