JPS57211237A - Plasma reaction device - Google Patents

Plasma reaction device

Info

Publication number
JPS57211237A
JPS57211237A JP56095354A JP9535481A JPS57211237A JP S57211237 A JPS57211237 A JP S57211237A JP 56095354 A JP56095354 A JP 56095354A JP 9535481 A JP9535481 A JP 9535481A JP S57211237 A JPS57211237 A JP S57211237A
Authority
JP
Japan
Prior art keywords
plasma
electrode
diffusion plate
gas
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56095354A
Other languages
English (en)
Other versions
JPS6410933B2 (ja
Inventor
Masakuni Akiba
Hiroto Nagatomo
Kazuhiko Yonemitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP56095354A priority Critical patent/JPS57211237A/ja
Publication of JPS57211237A publication Critical patent/JPS57211237A/ja
Publication of JPS6410933B2 publication Critical patent/JPS6410933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP56095354A 1981-06-22 1981-06-22 Plasma reaction device Granted JPS57211237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56095354A JPS57211237A (en) 1981-06-22 1981-06-22 Plasma reaction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56095354A JPS57211237A (en) 1981-06-22 1981-06-22 Plasma reaction device

Publications (2)

Publication Number Publication Date
JPS57211237A true JPS57211237A (en) 1982-12-25
JPS6410933B2 JPS6410933B2 (ja) 1989-02-22

Family

ID=14135316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56095354A Granted JPS57211237A (en) 1981-06-22 1981-06-22 Plasma reaction device

Country Status (1)

Country Link
JP (1) JPS57211237A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239015A (ja) * 1984-05-11 1985-11-27 Toyobo Co Ltd アモルフアスシリコン膜の形成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022255745A1 (ko) * 2021-06-01 2022-12-08 주식회사 엘지에너지솔루션 전고체 리튬 이차전지 및 이의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467377A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Plasma processing apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467377A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Plasma processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239015A (ja) * 1984-05-11 1985-11-27 Toyobo Co Ltd アモルフアスシリコン膜の形成方法

Also Published As

Publication number Publication date
JPS6410933B2 (ja) 1989-02-22

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