JPS572571A - Thyristor and method of producing same - Google Patents

Thyristor and method of producing same

Info

Publication number
JPS572571A
JPS572571A JP6230581A JP6230581A JPS572571A JP S572571 A JPS572571 A JP S572571A JP 6230581 A JP6230581 A JP 6230581A JP 6230581 A JP6230581 A JP 6230581A JP S572571 A JPS572571 A JP S572571A
Authority
JP
Japan
Prior art keywords
thyristor
doping
producing same
type base
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6230581A
Other languages
English (en)
Inventor
Heruberuku Herumuuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS572571A publication Critical patent/JPS572571A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP6230581A 1980-05-06 1981-04-24 Thyristor and method of producing same Pending JPS572571A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803017313 DE3017313A1 (de) 1980-05-06 1980-05-06 Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Publications (1)

Publication Number Publication Date
JPS572571A true JPS572571A (en) 1982-01-07

Family

ID=6101738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6230581A Pending JPS572571A (en) 1980-05-06 1981-04-24 Thyristor and method of producing same

Country Status (3)

Country Link
EP (1) EP0039509A3 (ja)
JP (1) JPS572571A (ja)
DE (1) DE3017313A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642898U (ja) * 1992-11-18 1994-06-07 日本車輌製造株式会社 高所作業車

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3225991A1 (de) * 1982-07-12 1984-01-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur reduzierung der spannungsabhaengigkeit des spezifischen flaechenwiderstandes von si-zonen, welche sperrspannung aufnehmende pn-uebergaenge bilden
EP0144876B1 (de) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Halbleiterbauelement
EP0303046B1 (de) * 1987-08-11 1992-01-02 BBC Brown Boveri AG Gate-Turn-Off-Thyristor
US5204273A (en) * 1990-08-20 1993-04-20 Siemens Aktiengesellschaft Method for the manufacturing of a thyristor with defined lateral resistor
DE4026797A1 (de) * 1990-08-24 1992-02-27 Daimler Benz Ag Verfahren zur erzeugung von rekombinationszentren in dem halbleiterkoerper eines halbleiterbauelements
DE59203207D1 (de) * 1991-09-20 1995-09-14 Eupec Gmbh & Co Kg Thyristor mit Randstruktur.
JP3211604B2 (ja) * 1995-02-03 2001-09-25 株式会社日立製作所 半導体装置
DE10250608B4 (de) * 2002-10-30 2005-09-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung
DE10250609B4 (de) * 2002-10-30 2005-12-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH427042A (de) * 1963-09-25 1966-12-31 Licentia Gmbh Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps
GB1214151A (en) * 1967-02-07 1970-12-02 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
SE375881B (ja) * 1972-11-17 1975-04-28 Asea Ab
DE2304647C2 (de) * 1973-01-31 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper
US3945857A (en) * 1974-07-01 1976-03-23 Fairchild Camera And Instrument Corporation Method for fabricating double-diffused, lateral transistors
US4043837A (en) * 1975-01-10 1977-08-23 Westinghouse Electric Corporation Low forward voltage drop thyristor
DE2703877C2 (de) * 1977-01-31 1982-06-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
DE2807747A1 (de) * 1978-02-23 1979-09-06 Philips Patentverwaltung Verfahren zum herstellen eines halbleiterbauelements
CA1131800A (en) * 1978-12-20 1982-09-14 Bernard T. Murphy High voltage junction solid-state switch
GB2045000A (en) * 1979-03-19 1980-10-22 Westinghouse Electric Corp An asymmetric thyristor
DE8021645U1 (de) * 1980-08-13 1981-04-09 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement für hohe Sperrspannungen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642898U (ja) * 1992-11-18 1994-06-07 日本車輌製造株式会社 高所作業車

Also Published As

Publication number Publication date
EP0039509A3 (de) 1982-04-07
DE3017313A1 (de) 1981-11-12
EP0039509A2 (de) 1981-11-11

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