JPS5740921A - Diffusion of gallium - Google Patents

Diffusion of gallium

Info

Publication number
JPS5740921A
JPS5740921A JP55116486A JP11648680A JPS5740921A JP S5740921 A JPS5740921 A JP S5740921A JP 55116486 A JP55116486 A JP 55116486A JP 11648680 A JP11648680 A JP 11648680A JP S5740921 A JPS5740921 A JP S5740921A
Authority
JP
Japan
Prior art keywords
diffusion
gallium
water
ga2o
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55116486A
Other languages
Japanese (ja)
Other versions
JPS5943089B2 (en
Inventor
Kimihiro Muraoka
Hitoshi Kitahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Denki Seizo KK, Toyo Electric Manufacturing Ltd filed Critical Toyo Denki Seizo KK
Priority to JP55116486A priority Critical patent/JPS5943089B2/en
Publication of JPS5740921A publication Critical patent/JPS5740921A/en
Publication of JPS5943089B2 publication Critical patent/JPS5943089B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent abnormal diffusion of gallium and to form high reliable Si substrates by a method wherein a water supplying device is provided at the neighborhood of the Si substrates in a quartz tube wherein gallium is to be made to diffuse on Si making gallium trioxide as the diffusion source. CONSTITUTION:To perform diffusion of Ga according to the closed tube diffusion technique using gallium trioxide as the diffusion source, because it is necessary to decompose gallium trioxide with hydrogen to convert into Ga at 950 deg.C or more as Ga2O3+2H2 Ga2O+2H2O, Ga2O+H2 2Ga+H2O, hydrogen containing water is used as carrier gas. But only with this, water is insufficient, so that the water supplying device 10 being pure water 12 put in a boat 11 is provided in the rear of a suppoter 1' in the quartz tube 6. Accordingly abnormal diffusion of Ga to be caused by insufficiency of water is prevented, and diffusion of Ga having high reliability is performed.
JP55116486A 1980-08-26 1980-08-26 Gallium diffusion method Expired JPS5943089B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116486A JPS5943089B2 (en) 1980-08-26 1980-08-26 Gallium diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116486A JPS5943089B2 (en) 1980-08-26 1980-08-26 Gallium diffusion method

Publications (2)

Publication Number Publication Date
JPS5740921A true JPS5740921A (en) 1982-03-06
JPS5943089B2 JPS5943089B2 (en) 1984-10-19

Family

ID=14688302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116486A Expired JPS5943089B2 (en) 1980-08-26 1980-08-26 Gallium diffusion method

Country Status (1)

Country Link
JP (1) JPS5943089B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55139502A (en) * 1979-04-12 1980-10-31 Kobe Steel Ltd Control circuit for actuator
JPH0198302U (en) * 1987-12-21 1989-06-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55139502A (en) * 1979-04-12 1980-10-31 Kobe Steel Ltd Control circuit for actuator
JPH0198302U (en) * 1987-12-21 1989-06-30

Also Published As

Publication number Publication date
JPS5943089B2 (en) 1984-10-19

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