JPS5743424A - Electron beam exposure system - Google Patents
Electron beam exposure systemInfo
- Publication number
- JPS5743424A JPS5743424A JP55119343A JP11934380A JPS5743424A JP S5743424 A JPS5743424 A JP S5743424A JP 55119343 A JP55119343 A JP 55119343A JP 11934380 A JP11934380 A JP 11934380A JP S5743424 A JPS5743424 A JP S5743424A
- Authority
- JP
- Japan
- Prior art keywords
- stages
- electron beam
- beam exposure
- exposure system
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. program control
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To shorten the exposure period of an electron beam exposure system by individually controlling the stages of a deflection correction arithmetic circuit with clock signal and performing in parallel an arithmetic process for the different deflecting position assignment data in the respective stages, thereby processing the correction calculation in a pipeline process. CONSTITUTION:Delay circuits 11, 12, 13, 14 delay clock signals applied to X-axis and Y-axis registers 8, 9 in the prescribed time, and apply them to respective first to fourth stage arithmetic units. The clock signals are applied to the respective stages at every 300ns, and the stages thus calculate in parallel the data Xn, Yn different in the respective stages and deliver them to the following stages in a pipeline process. Consequently, the electron beam exposure is performed at every 300ns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55119343A JPS5743424A (en) | 1980-08-29 | 1980-08-29 | Electron beam exposure system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55119343A JPS5743424A (en) | 1980-08-29 | 1980-08-29 | Electron beam exposure system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5743424A true JPS5743424A (en) | 1982-03-11 |
Family
ID=14759129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55119343A Pending JPS5743424A (en) | 1980-08-29 | 1980-08-29 | Electron beam exposure system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5743424A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204626A (en) * | 1983-05-06 | 1984-11-20 | Asahi Chem Ind Co Ltd | Finely porous film of synthetic resin having nonporous layer |
| JPH02159014A (en) * | 1988-12-13 | 1990-06-19 | Toshiba Corp | Method of and apparatus for producing data for charged particle beam lithography |
-
1980
- 1980-08-29 JP JP55119343A patent/JPS5743424A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204626A (en) * | 1983-05-06 | 1984-11-20 | Asahi Chem Ind Co Ltd | Finely porous film of synthetic resin having nonporous layer |
| JPH02159014A (en) * | 1988-12-13 | 1990-06-19 | Toshiba Corp | Method of and apparatus for producing data for charged particle beam lithography |
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