JPS5743480A - Photosemiconductor element - Google Patents

Photosemiconductor element

Info

Publication number
JPS5743480A
JPS5743480A JP55118593A JP11859380A JPS5743480A JP S5743480 A JPS5743480 A JP S5743480A JP 55118593 A JP55118593 A JP 55118593A JP 11859380 A JP11859380 A JP 11859380A JP S5743480 A JPS5743480 A JP S5743480A
Authority
JP
Japan
Prior art keywords
type
forming
junction
injected
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55118593A
Other languages
Japanese (ja)
Inventor
Takao Kaneda
Takashi Mikawa
Shuzo Kagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55118593A priority Critical patent/JPS5743480A/en
Publication of JPS5743480A publication Critical patent/JPS5743480A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To form an oblique junction having a low gradient and to deepen the depth of the junction surface in a photosemiconductor element by forming an n type photodetecting region in a p type germainium substrate and forming a p type region in the junction part of the photodetector. CONSTITUTION:As ions are injected to a p type substrate 1 of Ge having an impurity density of approx. 10<15>/cm<3>, the substrate 1 is then heat treated, and an n type region 2 is formed. Further, Be ions are injected as p type impurity, thereby forming a p type region 4. Since the Be ion injection distribution does not become glass distribution but a skirt is trailed, thereby forming an oblique junction having a low gradient. Since the junction surface of the n type photodetector is deep, relatively pure holes can be injected and the maximum electric field value at the breakdown time is decreased, while a low noise avalanche photodiode can be obtained.
JP55118593A 1980-08-28 1980-08-28 Photosemiconductor element Pending JPS5743480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55118593A JPS5743480A (en) 1980-08-28 1980-08-28 Photosemiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55118593A JPS5743480A (en) 1980-08-28 1980-08-28 Photosemiconductor element

Publications (1)

Publication Number Publication Date
JPS5743480A true JPS5743480A (en) 1982-03-11

Family

ID=14740416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55118593A Pending JPS5743480A (en) 1980-08-28 1980-08-28 Photosemiconductor element

Country Status (1)

Country Link
JP (1) JPS5743480A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630780A (en) * 2017-03-15 2018-10-09 株式会社东芝 Photodetector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630780A (en) * 2017-03-15 2018-10-09 株式会社东芝 Photodetector

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