JPS5749231A - Forming method for electrode and wiring layer - Google Patents

Forming method for electrode and wiring layer

Info

Publication number
JPS5749231A
JPS5749231A JP55125594A JP12559480A JPS5749231A JP S5749231 A JPS5749231 A JP S5749231A JP 55125594 A JP55125594 A JP 55125594A JP 12559480 A JP12559480 A JP 12559480A JP S5749231 A JPS5749231 A JP S5749231A
Authority
JP
Japan
Prior art keywords
film
plasma
aluminum
formation
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55125594A
Other languages
Japanese (ja)
Inventor
Teruhiko Yamazaki
Yoshiki Suzuki
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55125594A priority Critical patent/JPS5749231A/en
Publication of JPS5749231A publication Critical patent/JPS5749231A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To facilitate the formation of an electrode wiring layer by forming the second metallic film readily bromided with Ti or the like on an aluminum layer, selectively etching the second metallic film with bromine gas plasma and removing the aluminum layer with chlorine gas plasma. CONSTITUTION:A hole is opened at the oxidized film 2 on the surface of a substrate 1 formed with an active region 4 to expose the region 4, and aluminum film 3 is formed on the overall surface. A Ti film 5 (or Nb, Ta, Au, Mo bromide is readily formed as a metallic layer) is, for example, formed thinly consecutively onto the film 3. With the resist pattern 5 as a mask it is etched with plasma with Br2 gas to etch the film 5, and then the film 3 is etched with plasma with CCl4 gas of diluted Ar. Thus, it can prevent the formation of alumina on the film 3, thereby facilitating the formation of aluminum electrode wire by plasma etching.
JP55125594A 1980-09-09 1980-09-09 Forming method for electrode and wiring layer Pending JPS5749231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55125594A JPS5749231A (en) 1980-09-09 1980-09-09 Forming method for electrode and wiring layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55125594A JPS5749231A (en) 1980-09-09 1980-09-09 Forming method for electrode and wiring layer

Publications (1)

Publication Number Publication Date
JPS5749231A true JPS5749231A (en) 1982-03-23

Family

ID=14914009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55125594A Pending JPS5749231A (en) 1980-09-09 1980-09-09 Forming method for electrode and wiring layer

Country Status (1)

Country Link
JP (1) JPS5749231A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556844A (en) * 1978-06-28 1980-01-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of formating wiring pattern

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556844A (en) * 1978-06-28 1980-01-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of formating wiring pattern

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