JPS5754346A - Taketsushoshirikonhaisensonokeiseihoho - Google Patents

Taketsushoshirikonhaisensonokeiseihoho

Info

Publication number: JPS5754346A
Authority: JP; Japan
Prior art keywords: wiring; polycrystalline silicon; film; silicon; silicon nitride
Prior art date: 1980-09-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP13041880A

Other languages

English (en)

Inventor

Shigenori Matsumoto

Yoshimitsu Hiroshima

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee

Matsushita Electronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-09-18

Filing date

1980-09-18

Publication date

1982-03-31

1980-09-18 Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp

1980-09-18 Priority to JP13041880A priority Critical patent/JPS5754346A/ja

1982-03-31 Publication of JPS5754346A publication Critical patent/JPS5754346A/ja

Status Pending legal-status Critical Current

Links

229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 4
230000015572 biosynthetic process Effects 0.000 title 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
229910052581 Si3N4 Inorganic materials 0.000 abstract 3
239000004065 semiconductor Substances 0.000 abstract 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
230000003647 oxidation Effects 0.000 abstract 2
238000007254 oxidation reaction Methods 0.000 abstract 2
235000012239 silicon dioxide Nutrition 0.000 abstract 2
239000000377 silicon dioxide Substances 0.000 abstract 2
239000000463 material Substances 0.000 abstract 1
238000000034 method Methods 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1

Landscapes

Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

JP13041880A 1980-09-18 1980-09-18 Taketsushoshirikonhaisensonokeiseihoho Pending JPS5754346A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP13041880A JPS5754346A (ja)	1980-09-18	1980-09-18	Taketsushoshirikonhaisensonokeiseihoho

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP13041880A JPS5754346A (ja)	1980-09-18	1980-09-18	Taketsushoshirikonhaisensonokeiseihoho

Publications (1)

Publication Number	Publication Date
JPS5754346A true JPS5754346A (ja)	1982-03-31

Family

ID=15033774

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP13041880A Pending JPS5754346A (ja)	1980-09-18	1980-09-18	Taketsushoshirikonhaisensonokeiseihoho

Country Status (1)

Country	Link
JP (1)	JPS5754346A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS62166568A (ja) *	1986-01-20	1987-07-23	Nippon Telegr & Teleph Corp <Ntt>	半導体装置および製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5315788A (en) *	1976-07-28	1978-02-14	Sharp Corp	Production of semiconductor device

1980
- 1980-09-18 JP JP13041880A patent/JPS5754346A/ja active Pending

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5315788A (en) *	1976-07-28	1978-02-14	Sharp Corp	Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS62166568A (ja) *	1986-01-20	1987-07-23	Nippon Telegr & Teleph Corp <Ntt>	半導体装置および製造方法

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