JPS5759327A - Method for variable rectangular electron beam exposure - Google Patents

Method for variable rectangular electron beam exposure

Info

Publication number
JPS5759327A
JPS5759327A JP55134551A JP13455180A JPS5759327A JP S5759327 A JPS5759327 A JP S5759327A JP 55134551 A JP55134551 A JP 55134551A JP 13455180 A JP13455180 A JP 13455180A JP S5759327 A JPS5759327 A JP S5759327A
Authority
JP
Japan
Prior art keywords
slit
waveform
electron beam
rotating
changed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55134551A
Other languages
Japanese (ja)
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55134551A priority Critical patent/JPS5759327A/en
Publication of JPS5759327A publication Critical patent/JPS5759327A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To perform an excellent exposure by a method wherein, when the rectangular beam shape is to be changed by shifting the first slit image in X and Y directions on the second slit, the matching by rotating is performed in such a manner that the beam end position on the bean transverse section on the sample surface is not shifted. CONSTITUTION:When the rectangular beam formed by the first slit 13 and the second slit 15 passes through a differentiation circuit, it is turned to a waveform a. Then, the differential waveform of the first slit 13, when passing through the second slit, which has moved on the first slit along Y axis, is changed to a waveform b. This is because of the rotation of the second slit, which retards the rotating speed by t1 seconds. In order to eliminate the deviation, the second slit is rotated is in such a manner that the t1 is zeroed. Through these procedures, the rotating positions of the two slits are matched and each side of a rectuangular electron beam can be faced sample surface in parallel, thereby enabling to perform an excellent exposure.
JP55134551A 1980-09-27 1980-09-27 Method for variable rectangular electron beam exposure Pending JPS5759327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55134551A JPS5759327A (en) 1980-09-27 1980-09-27 Method for variable rectangular electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134551A JPS5759327A (en) 1980-09-27 1980-09-27 Method for variable rectangular electron beam exposure

Publications (1)

Publication Number Publication Date
JPS5759327A true JPS5759327A (en) 1982-04-09

Family

ID=15130956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55134551A Pending JPS5759327A (en) 1980-09-27 1980-09-27 Method for variable rectangular electron beam exposure

Country Status (1)

Country Link
JP (1) JPS5759327A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107205B2 (en) * 1983-03-07 1995-11-15 イーストマン・コダック・カンパニー Cutting device and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107205B2 (en) * 1983-03-07 1995-11-15 イーストマン・コダック・カンパニー Cutting device and method

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