JPS5771144A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5771144A
JPS5771144A JP55147327A JP14732780A JPS5771144A JP S5771144 A JPS5771144 A JP S5771144A JP 55147327 A JP55147327 A JP 55147327A JP 14732780 A JP14732780 A JP 14732780A JP S5771144 A JPS5771144 A JP S5771144A
Authority
JP
Japan
Prior art keywords
diffusion
formation
film
anode oxidation
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55147327A
Other languages
Japanese (ja)
Inventor
Hikosuke Shibayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55147327A priority Critical patent/JPS5771144A/en
Publication of JPS5771144A publication Critical patent/JPS5771144A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To capacitate the formation of device isolating section after diffusion by a method wherein a substrate subjected to the formation of a dopant diffused layer is exposed to an oxygen plasma at low temperature so that anode oxidation may be accomplished and the diffusion layer insulatedly isolated. CONSTITUTION:In manufacturing an MOSFET, after the formation of a gate film 22 and a polycrystalline Si gate 23 on a P type substrate 21, an As diffusion layer 24 is formed by ion injection. Next, by the CVD method, and Al2O3 film approximately 3,000Angstrom thick is formed and a mask layer Al2O3 film 25 is patterned in the region where a device is built. This wafer C is the placed on an electrode 9 situated in a quartz tube 6, for anode oxidation to be made in a 300-400 deg.C hot oxygen plasma. The resultant oxide film 26 should be about 8,000Angstrom thick. Next, the Al2O3 film 25 is provided with an aperture in which an Al electrode is tempertures thus enables an isolating process to be accomplished after diffusion. In a process involving a bipolar transistor, too, a device can be isolated after anode oxidation following base diffusion.
JP55147327A 1980-10-21 1980-10-21 Manufacture of semiconductor device Pending JPS5771144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147327A JPS5771144A (en) 1980-10-21 1980-10-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147327A JPS5771144A (en) 1980-10-21 1980-10-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5771144A true JPS5771144A (en) 1982-05-01

Family

ID=15427669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147327A Pending JPS5771144A (en) 1980-10-21 1980-10-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771144A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5854112A (en) * 1993-03-30 1998-12-29 Siemens Aktiengesellschaft Transistor isolation process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5854112A (en) * 1993-03-30 1998-12-29 Siemens Aktiengesellschaft Transistor isolation process

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