JPS55157264A - Manufacturing method for semiconductor device - Google Patents

Manufacturing method for semiconductor device

Info

Publication number
JPS55157264A
JPS55157264A JP6463579A JP6463579A JPS55157264A JP S55157264 A JPS55157264 A JP S55157264A JP 6463579 A JP6463579 A JP 6463579A JP 6463579 A JP6463579 A JP 6463579A JP S55157264 A JPS55157264 A JP S55157264A
Authority
JP
Japan
Prior art keywords
film
oxidation film
photo resist
gate electrode
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6463579A
Other languages
Japanese (ja)
Inventor
Moritomo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6463579A priority Critical patent/JPS55157264A/en
Publication of JPS55157264A publication Critical patent/JPS55157264A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To lessen the bad influence given to a gate electrode due to the concentration of an electric field generated in a drain region and also to give an improvement in the withstand voltage of an element by having a heat oxidation after giving an etching in such a way that the size of a gate oxidation film will be smaller than that width of an electrode. CONSTITUTION:An Si oxidation film 12, a polycrystalline film 13 and a photo resist film 15 are formed successively on a P-type Si substrate 11. A polycrystalline silicon gate electrode 16 is formed using the formed photo resist film 15 as a mask, and then after a gate oxidation film 17 is formed, impurity regions 18' 19' are formed by an ion injection, and then the photo resist film 15 is removed. When an Si oxidation film is formed by heating a substrte, the injected impurities are activated, and a source region and a drain region 19 are formed. At this time, a heat oxidation film 20 pushes up the end section of a polycrystalline silicon gate electrode 16 and the said regions are formed with a limited part having a heavier thickness.
JP6463579A 1979-05-25 1979-05-25 Manufacturing method for semiconductor device Pending JPS55157264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6463579A JPS55157264A (en) 1979-05-25 1979-05-25 Manufacturing method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6463579A JPS55157264A (en) 1979-05-25 1979-05-25 Manufacturing method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS55157264A true JPS55157264A (en) 1980-12-06

Family

ID=13263917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6463579A Pending JPS55157264A (en) 1979-05-25 1979-05-25 Manufacturing method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS55157264A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151976A (en) * 1984-08-22 1986-03-14 Nec Corp Mis type semiconductor device
JPS63177561A (en) * 1987-01-19 1988-07-21 Sanyo Electric Co Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151976A (en) * 1984-08-22 1986-03-14 Nec Corp Mis type semiconductor device
JPS63177561A (en) * 1987-01-19 1988-07-21 Sanyo Electric Co Ltd Manufacture of semiconductor device

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