JPS5771175A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5771175A
JPS5771175A JP55147998A JP14799880A JPS5771175A JP S5771175 A JPS5771175 A JP S5771175A JP 55147998 A JP55147998 A JP 55147998A JP 14799880 A JP14799880 A JP 14799880A JP S5771175 A JPS5771175 A JP S5771175A
Authority
JP
Japan
Prior art keywords
film
region
electrode
substrate
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55147998A
Other languages
Japanese (ja)
Inventor
Nobuhiro Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55147998A priority Critical patent/JPS5771175A/en
Publication of JPS5771175A publication Critical patent/JPS5771175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the reliability of wiring by reducing a step difference in the surface of a substrate and to obtain a fine pattern as well by a method wherein an interlayer insulating film is composed by using a semiconductor amorphous material in a semiconductor device and a part of the film is made as a conductor to provide a contact region. CONSTITUTION:A channel stopper region 2 is formed around an Si substrate 1 and the upper part of the region 2 is covered with a thick field oxide film 3 to form a thin gate oxide film 4 at the central part of the substrate 1 surrounded by the film 3 and a gate electrode 5 consisting of polycrystalline Si is provided on the film 4. Next, the electrode 5 is used as a mask and source and drain regions 6 are formed in self alignment manner by diffusion or ion implantation, and the electrde 5 is made low in resistance and an amorphous Si film 71 is grown on the whole surface by using silane tatra fluoride. Then, the surface of the film 71 is covered with an Si3N4 film 72 to perforate an opening by corresponding to the region 6 and the electrode 5 and low resistance contact regions 73 connected to the region 6 and the elctrode 5 are grown in the film 71 by implanting impurity ions and each Al electrode 9 is deposited on the surface of a region 73.
JP55147998A 1980-10-22 1980-10-22 Semiconductor device Pending JPS5771175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147998A JPS5771175A (en) 1980-10-22 1980-10-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147998A JPS5771175A (en) 1980-10-22 1980-10-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5771175A true JPS5771175A (en) 1982-05-01

Family

ID=15442820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147998A Pending JPS5771175A (en) 1980-10-22 1980-10-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771175A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725877A (en) * 1986-04-11 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Metallized semiconductor device including an interface layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725877A (en) * 1986-04-11 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Metallized semiconductor device including an interface layer

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