JPS577164A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577164A
JPS577164A JP8123380A JP8123380A JPS577164A JP S577164 A JPS577164 A JP S577164A JP 8123380 A JP8123380 A JP 8123380A JP 8123380 A JP8123380 A JP 8123380A JP S577164 A JPS577164 A JP S577164A
Authority
JP
Japan
Prior art keywords
electrodes
buffer layer
active layer
sio2
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8123380A
Other languages
English (en)
Inventor
Masanori Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8123380A priority Critical patent/JPS577164A/ja
Publication of JPS577164A publication Critical patent/JPS577164A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP8123380A 1980-06-16 1980-06-16 Semiconductor device Pending JPS577164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8123380A JPS577164A (en) 1980-06-16 1980-06-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8123380A JPS577164A (en) 1980-06-16 1980-06-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS577164A true JPS577164A (en) 1982-01-14

Family

ID=13740726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8123380A Pending JPS577164A (en) 1980-06-16 1980-06-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577164A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193947A (ja) * 1983-04-19 1984-11-02 Ishikawajima Harima Heavy Ind Co Ltd 酸素中における難燃性樹脂
EP0614215A1 (fr) * 1993-03-05 1994-09-07 Alcatel N.V. Procédé de formation d'un contact métallique sur un relief d'un substrat semi-conducteur, incluant une étape de fluage d'une couche de résine photosensible
KR100333155B1 (ko) * 1994-09-16 2002-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막반도체장치및그제조방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193947A (ja) * 1983-04-19 1984-11-02 Ishikawajima Harima Heavy Ind Co Ltd 酸素中における難燃性樹脂
EP0614215A1 (fr) * 1993-03-05 1994-09-07 Alcatel N.V. Procédé de formation d'un contact métallique sur un relief d'un substrat semi-conducteur, incluant une étape de fluage d'une couche de résine photosensible
FR2702306A1 (fr) * 1993-03-05 1994-09-09 Alcatel Nv Procédé d'auto-alignement d'un contact métallique sur un substrat de matériau semi-conducteur.
KR100333155B1 (ko) * 1994-09-16 2002-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막반도체장치및그제조방법

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